JANTXVE2N2221AUB-Transistor by JANTXVE2 | NPN Power Transistor | TO-220 Package

  • This transistor controls current flow efficiently, enabling precise switching in electronic circuits.
  • A key specification ensures stable operation under varying electrical loads, enhancing circuit performance.
  • The compact package type offers board-space savings, making it suitable for densely packed designs.
  • Ideal for use in amplification stages where signal clarity and response speed are critical.
  • Manufactured to meet industry reliability standards, ensuring consistent and durable operation over time.
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JANTXVE2N2221AUB-Transistor Overview

The JANTXVE2N2221AUB is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a robust gain bandwidth and reliable switching capabilities, this transistor offers consistent performance under varying operating conditions. It supports collector currents up to 800mA and a collector-emitter voltage of 40V, making it suitable for medium-power circuits. The device??s construction ensures dependable operation in industrial environments, making it a preferred choice for engineers and sourcing specialists requiring a durable, cost-effective transistor solution. For more detailed information, visit IC Manufacturer.

JANTXVE2N2221AUB-Transistor Key Features

  • High collector current capacity: Supports up to 800mA, enabling efficient handling of medium-power loads in switching and amplification roles.
  • Maximum collector-emitter voltage of 40V: Ensures reliable operation within typical industrial voltage ranges, enhancing circuit robustness.
  • Low saturation voltage: Minimizes power dissipation during switching, improving energy efficiency and thermal management in designs.
  • Complementary gain characteristics: Provides stable current gain (hFE) allowing precise amplification control across the operating range.

JANTXVE2N2221AUB-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (PD) 500 mW
Gain Bandwidth Product (fT) 300 MHz (typical)
DC Current Gain (hFE) 100 to 300
Package Type TO-18 Metal Can

JANTXVE2N2221AUB-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced current handling and voltage ratings compared to many standard small-signal transistors, providing improved switching speed and gain characteristics. Its low saturation voltage reduces power loss, contributing to better efficiency in industrial and control applications. The robust TO-18 package ensures superior thermal performance and mechanical durability, making it a reliable choice over plastic-encapsulated alternatives.

Typical Applications

  • Signal amplification in analog circuits where moderate power and frequency response are required, such as preamplifiers and driver stages.
  • Switching devices in power management systems, enabling efficient control of relays and small motors.
  • General-purpose switching in industrial control equipment, providing reliable operation under varied electrical loads.
  • Low-noise amplifier stages in communication devices, leveraging the transistor??s gain bandwidth for signal integrity.

JANTXVE2N2221AUB-Transistor Brand Info

The JANTXVE2N2221AUB transistor is a premium offering designed to meet stringent military and industrial standards. Known for its quality and consistency, this product is manufactured under rigorous processes to ensure high reliability and performance stability. The device is well-regarded in the semiconductor industry for applications requiring dependable NPN transistors with proven durability and long operational life.

FAQ

What is the maximum collector current rating for this transistor?

The transistor can handle a maximum continuous collector current of 800mA. Exceeding this current may cause device failure or degraded performance, so it is important to design circuits within this limit.

What type of package does the transistor come in?

This transistor is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection, suitable for demanding industrial environments.

Can this transistor be used for high-frequency applications?

Yes, the device exhibits a typical gain bandwidth product of 300 MHz, making it suitable for moderate to high-frequency analog and switching applications, including RF preamplifiers.

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What is the typical DC current gain (hFE) range?

The transistor??s DC current gain typically ranges from 100 to 300, depending on the operating conditions, allowing for flexibility in amplification and switching circuit designs.

Is this transistor suitable for power switching applications?

It is suitable for medium-power switching applications up to 40V and 800mA. For higher power demands, other transistor types with greater ratings should be considered.

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