JANTXVE2N2221AUA-Transistor Overview
The JANTXVE2N2221AUA transistor is a high-performance, silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Offering a maximum collector current of 800mA and a collector-emitter voltage rating of 40V, this transistor provides robust operation in medium-power circuits. Its complementary gain bandwidth product of 300MHz supports efficient signal processing in a variety of industrial and electronic designs. Engineered to meet stringent military specifications, this transistor ensures reliability and consistency in demanding environments. Sourcing specialists and engineers will find this device suitable for precision applications requiring durability and stable electrical characteristics. For more details, visit IC Manufacturer.
JANTXVE2N2221AUA-Transistor Key Features
- High Collector Current Capability: Supports up to 800mA, enabling efficient handling of medium-power loads without thermal degradation.
- Voltage Ratings: Collector-emitter voltage of 40V ensures reliable operation in circuits with moderate voltage requirements.
- Gain Bandwidth Product: 300MHz frequency response facilitates high-speed switching and amplification, ideal for fast signal applications.
- Military-Grade Quality: Manufactured to meet rigorous MIL-STD specifications, ensuring enhanced reliability and consistent performance under harsh conditions.
JANTXVE2N2221AUA-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current Continuous (IC) | 800 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| Gain Bandwidth Product (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100 ?C 300 | Unitless |
| Transition Frequency (fT) | 300 | MHz |
| Operating Temperature Range | -65 to +200 | ??C |
JANTXVE2N2221AUA-Transistor Advantages vs Typical Alternatives
Compared to standard transistors, this device offers superior collector current capacity and voltage ratings, paired with a high gain bandwidth product. Its military-grade reliability and extended operating temperature range make it advantageous for applications demanding stable performance under stress. These factors contribute to improved accuracy, enhanced durability, and integration ease in complex industrial and defense electronic systems.
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Typical Applications
- Signal amplification in communication and control circuits requiring stable gain up to 300MHz frequency ranges, supporting efficient analog and digital processing.
- Switching applications in power regulation and relay driving circuits where controlled current handling is critical.
- Industrial instrumentation systems needing rugged, reliable transistors that operate consistently over wide temperature ranges.
- Military and aerospace electronic equipment designed to meet strict performance and environmental standards.
JANTXVE2N2221AUA-Transistor Brand Info
The JANTXVE2N2221AUA transistor is part of a trusted series manufactured under stringent military standards, ensuring durability and performance in critical applications. This device is recognized for its consistent electrical parameters and robust build quality, making it a preferred choice among engineers and sourcing specialists for high-reliability environments. Backed by precise manufacturing and quality control, it embodies the reliability standards expected from military-grade semiconductor components.
FAQ
What is the maximum collector current supported by this transistor?
This transistor supports a maximum continuous collector current of 800mA, allowing it to handle medium-power loads effectively in switching and amplification circuits.
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What voltage ratings does the device have for collector-emitter and collector-base?
The device features a collector-emitter voltage rating of 40V and a collector-base voltage rating of 75V, ensuring it can operate safely within moderate voltage environments.
How does the gain bandwidth product affect its performance?
The gain bandwidth product of 300MHz indicates this transistor can amplify signals efficiently at high frequencies, which is crucial for fast switching and high-speed signal processing applications.
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Is this transistor suitable for harsh or military environments?
Yes, it is manufactured to meet military-grade specifications, providing enhanced reliability and operational stability under extreme temperature and environmental conditions.
What is the operating temperature range for this component?
The transistor operates reliably across a temperature range from -65??C to +200??C, making it suitable for industrial and aerospace applications requiring wide thermal tolerance.
