JANTXVE2N2221AL-Transistor NPN Power Transistor – JANTXVE Package Type

  • This transistor amplifies electrical signals, enabling control of current flow in various circuits efficiently.
  • Featuring a robust voltage rating, it ensures stable operation under varying electrical loads.
  • Its compact package design offers board-space savings, ideal for dense electronic assemblies.
  • Suitable for switching applications, it helps improve device responsiveness and power management.
  • Manufactured with strict quality controls, it delivers consistent performance and long-term reliability.
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JANTXVE2N2221AL-Transistor Overview

The JANTXVE2N2221AL is a high-performance bipolar junction transistor (BJT) widely used for switching and amplification in electronic circuits. It features a silicon NPN structure optimized for medium power applications, offering reliable operation with a maximum collector current of 800mA and a collector-emitter voltage rating of 40V. This transistor is well-suited for industrial and commercial applications requiring efficient signal amplification or switching with low noise levels. Its robust design ensures excellent thermal stability, making it a dependable choice for engineers focused on durability and performance. For more detailed sourcing and manufacturing support, visit IC Manufacturer.

JANTXVE2N2221AL-Transistor Key Features

  • High collector current capacity: Supports up to 800mA, enabling effective handling of medium-power switching and amplification tasks.
  • Moderate voltage rating: Collector-emitter voltage up to 40V ensures compatibility with a wide range of circuit voltages and reduces risk of breakdown.
  • Low saturation voltage: Enhances switching efficiency by minimizing power loss during transistor operation.
  • Robust thermal stability: Designed to maintain performance under varying temperature conditions, improving reliability in industrial environments.

JANTXVE2N2221AL-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Maximum Collector-Emitter Voltage (VCEO) 40 V
Maximum Collector-Base Voltage (VCBO) 75 V
Maximum Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 500 mW
Transition Frequency (fT) 300 MHz
DC Current Gain (hFE) 40 to 300 (depending on operating point)
Package Type TO-18 Metal Can

JANTXVE2N2221AL-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and voltage rating compared to many standard low-power BJTs, making it ideal for moderate power applications. Its low saturation voltage and high transition frequency contribute to efficient switching and amplification with minimal signal distortion. Additionally, the rugged metal TO-18 package enhances thermal dissipation and mechanical reliability, surpassing typical plastic-encapsulated alternatives in demanding industrial conditions.

Typical Applications

  • General-purpose switching and amplification in industrial control systems, where robust performance and thermal stability are critical for reliable operation.
  • Signal amplification in audio preamplifiers requiring low noise and high gain consistency.
  • Driver stages for relay and solenoid control circuits in automation equipment.
  • Low to medium power linear amplifiers in instrumentation and test equipment.

JANTXVE2N2221AL-Transistor Brand Info

The JANTXVE2N2221AL is a military-grade variant of the popular 2N2221 transistor, known for its enhanced reliability and extended temperature range compliance. This product is manufactured under stringent quality standards, ensuring suitability for aerospace, defense, and high-reliability industrial applications. Its brand reputation is built on decades of proven field performance and adherence to rigorous JEDEC and MIL-STD testing protocols, making it a trusted component among engineers who prioritize longevity and robustness in semiconductor devices.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 800 milliamps (mA), which allows it to handle moderate power switching and amplification tasks in various electronic circuits.

Can this transistor be used for high-frequency applications?

Yes, with a transition frequency (fT) of approximately 300 MHz, this device is suitable for many high-frequency applications including RF amplification and fast switching circuits.

What package type does the transistor come in?

This transistor is housed in a TO-18 metal can package, which provides enhanced thermal conductivity and mechanical durability compared to standard plastic packages.

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Is this transistor suitable for industrial temperature ranges?

Yes, the military-grade version of this transistor is designed to operate reliably over extended temperature ranges, making it appropriate for industrial and harsh environment applications.

How does this transistor compare to standard 2N2221 types?

The JANTXVE2N2221AL offers similar electrical characteristics to standard 2N2221 transistors but with additional screening for reliability, thermal stability, and compliance with military specifications, ensuring better performance in demanding conditions.

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