JANTXVE2N2221A-Transistor by JANTXVE2 | NPN Power Amplifier Transistor, TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its maximum voltage rating ensures reliable operation under typical power supply conditions.
  • The compact package type supports board-space savings and simplifies integration into tight layouts.
  • Ideal for signal amplification in communication devices, enhancing overall system performance.
  • Manufactured to meet stringent quality standards, ensuring consistent and durable functionality.
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JANTXVE2N2221A-Transistor Overview

The JANTXVE2N2221A is a high-performance NPN bipolar junction transistor designed for switching and amplification applications. It delivers reliable operation with a maximum collector current of 800mA and a collector-emitter voltage rating up to 40V, making it suitable for medium power uses. Its robust construction ensures enhanced stability under varied environmental conditions, aligning well with industrial and military-grade requirements. The device offers low saturation voltage and fast switching speeds, optimizing efficiency in load-driving circuits and signal amplification. For detailed sourcing and technical support, visit IC Manufacturer.

JANTXVE2N2221A-Transistor Key Features

  • High collector current capability: Supports up to 800mA, enabling effective control of moderate loads in switching applications.
  • Collector-emitter voltage rating of 40V: Provides sufficient voltage headroom for diverse circuit designs and power levels.
  • Low saturation voltage: Minimizes power loss during conduction, enhancing overall circuit efficiency and thermal management.
  • Fast switching speed: Suitable for high-frequency operation, improving performance in signal amplification and pulse circuits.
  • Military-grade construction: Ensures reliability and durability under harsh environmental conditions, ideal for critical industrial applications.
  • Standard TO-18 metal can package: Provides superior thermal dissipation and mechanical protection.
  • Complementary gain characteristics: Facilitates predictable amplification and switching behavior within circuit designs.

JANTXVE2N2221A-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Maximum Collector-Emitter Voltage (Vceo) 40 V
Maximum Collector Current (Ic) 800 mA
Power Dissipation (Pd) 500 mW
DC Current Gain (hFE) 40 to 300 (depending on Ic)
Transition Frequency (fT) Up to 300 MHz
Saturation Voltage (Vce(sat)) Typically 0.3 V at Ic=150 mA
Package Type TO-18 Metal Can
Operating Temperature Range -55??C to +125??C

JANTXVE2N2221A-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and performance compared to standard transistors by providing a higher collector current capacity and lower saturation voltage. Its military-grade construction ensures enhanced durability in demanding environments, while the fast switching speed boosts efficiency in high-frequency applications. These attributes make it a preferred choice for engineers seeking dependable, efficient, and robust transistor solutions in industrial and defense sectors.

Typical Applications

  • Switching circuits in industrial control systems where moderate current handling and fast response times are critical for reliable operation.
  • Signal amplification in audio and low-power RF circuits requiring stable gain and low distortion.
  • Driver stages for relays and solenoids needing a transistor capable of handling inductive loads without performance degradation.
  • Temperature and environmental sensing circuits benefiting from the device??s wide operating temperature range and robust packaging.

JANTXVE2N2221A-Transistor Brand Info

The JANTXVE2N2221A is produced under stringent quality standards to meet military and industrial specifications. Its brand heritage is rooted in delivering components that combine high reliability with precise electrical characteristics. This transistor is part of a family known for durability and is widely recognized for consistent performance in critical electronic designs. Sourced from trusted manufacturers, it ensures supply chain confidence for engineering and procurement teams.

FAQ

What type of transistor is the JANTXVE2N2221A?

The device is an NPN bipolar junction transistor designed for switching and amplification. It operates with a maximum collector current of 800mA and a collector-emitter voltage rating of 40V, making it versatile for medium power applications.

What package does this transistor come in?

It is housed in a TO-18 metal can package, which offers excellent thermal dissipation and mechanical protection, suitable for industrial and military environments.

What is the typical current gain (hFE) range for this transistor?

The DC current gain ranges typically between 40 and 300, depending on the collector current, providing flexibility for various amplification needs.

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What operating temperature range does the JANTXVE2N2221A support?

This transistor supports a wide operating temperature range from -55??C to +125??C, enabling reliable performance under harsh environmental conditions.

How does the low saturation voltage benefit circuit design?

A low saturation voltage reduces power loss during conduction, which improves circuit efficiency and lowers heat generation, critical for maintaining performance and longevity in power switching applications.

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