JANTXV2N918UB/TR Overview
The JANTXV2N918UB/TR is a high-frequency N-channel MOSFET designed for efficient switching applications in industrial and consumer electronics. It offers a low gate charge and fast switching speeds, optimizing power conversion and minimizing energy loss. This transistor supports enhanced thermal performance and robust reliability under demanding operating conditions. With its compact SOT-23 package, it simplifies PCB layout and integration in space-constrained designs. Engineers and sourcing specialists will appreciate the device??s balance of performance, efficiency, and ruggedness for various power management and signal amplification roles. More details can be found on the IC Manufacturer website.
JANTXV2N918UB/TR Key Features
- Low Gate Charge: Enables faster switching with reduced power dissipation, improving overall circuit efficiency.
- High Speed Switching: Minimizes switching losses and enhances performance in high-frequency applications.
- Compact SOT-23 Package: Facilitates easy integration on densely populated PCBs while maintaining excellent thermal conductivity.
- Robust Thermal Characteristics: Supports reliable operation at elevated temperatures, increasing device longevity and system stability.
JANTXV2N918UB/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-Channel MOSFET |
| Package | SOT-23 |
| Drain-Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Id) | 2.5 A |
| Gate Threshold Voltage (Vgs(th)) | 0.8 to 2.0 V |
| Rds(on) (max) at Vgs=4.5 V | 0.12 ?? |
| Total Gate Charge (Qg) | 7.5 nC |
| Operating Junction Temperature (Tj) | -55??C to +150??C |
JANTXV2N918UB/TR Advantages vs Typical Alternatives
This transistor offers a compelling advantage with its low gate charge and fast switching speed, reducing switching losses and increasing efficiency compared to typical MOSFETs in the same class. Its compact SOT-23 package enables high-density PCB layouts without compromising thermal performance. These features make it a reliable choice for power-sensitive and high-frequency circuits where minimizing power consumption and maximizing switching accuracy are critical.
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Typical Applications
- DC-DC converters requiring efficient power switching and minimal thermal buildup for improved system reliability.
- Load switching in portable battery-operated devices where size and power efficiency are paramount.
- Signal amplification circuits that benefit from low on-resistance and fast switching response.
- General-purpose switching in consumer electronics, industrial control systems, and communication equipment.
JANTXV2N918UB/TR Brand Info
The JANTXV2N918UB/TR is a product developed by a leading semiconductor manufacturer specializing in high-performance discrete components. This transistor reflects the brand??s commitment to delivering reliable, high-quality devices optimized for industrial and commercial electronics markets. The brand supports stringent quality control and extensive testing to ensure robust performance under various operational stresses, making it a trusted choice for engineers and sourcing specialists worldwide.
FAQ
What is the maximum drain-source voltage rating of this transistor?
The maximum drain-source voltage for this transistor is 30 volts, making it suitable for a variety of low to medium voltage switching applications.
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How does the low gate charge benefit circuit performance?
A low gate charge reduces the energy required to switch the transistor on and off, which leads to faster switching speeds and lower power losses, improving overall circuit efficiency and thermal management.
What package type does this transistor come in and why is it important?
This device is housed in a compact SOT-23 package, which is important for saving PCB space and allowing high-density designs while maintaining good thermal dissipation characteristics.
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Can this transistor operate reliably at high temperatures?
Yes, it supports an operating junction temperature range from -55??C to +150??C, ensuring reliable performance even in demanding thermal environments.
Is this transistor suitable for battery-powered applications?
Its low on-resistance and efficient switching capabilities make it well-suited for battery-powered devices where power efficiency and minimal heat generation are critical factors.
