JANTXV2N7373-Transistor Overview
The JANTXV2N7373-Transistor is a high-reliability silicon NPN bipolar junction transistor designed for use in critical industrial and aerospace applications. Constructed to meet stringent military standards for durability and performance, it supports stable switching and amplification functions under harsh environmental conditions. This transistor offers robust electrical characteristics including a collector-emitter voltage rating suitable for medium-power circuits. Ideal for engineers and sourcing specialists requiring dependable semiconductor components, the device ensures consistent operation with low leakage currents and well-defined gain parameters. For reliable sourcing and technical details, visit IC Manufacturer.
JANTXV2N7373-Transistor Key Features
- High voltage tolerance: With a collector-emitter voltage rating typically around 80 V, it supports applications requiring medium voltage handling, ensuring safety margins in circuit design.
- Stable current gain (hFE): Maintains consistent amplification across temperature ranges, which is critical for precision analog and switching circuits.
- Low leakage currents: Minimizes power loss and thermal stress, improving overall circuit efficiency and reliability over extended operating periods.
- Military-grade construction: Manufactured to JAN (Joint Army-Navy) standards, providing enhanced ruggedness and stable operation in extreme environments.
JANTXV2N7373-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 80 | V |
| Collector-Base Voltage (Vcbo) | 100 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 500 | mA |
| Power Dissipation (Pd) | 600 | mW |
| DC Current Gain (hFE) | 40 to 160 | ?C |
| Transition Frequency (fT) | 100 | MHz |
| Operating Temperature Range | -55 to +125 | ??C |
JANTXV2N7373-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and consistent electrical performance compared to standard commercial-grade devices. Its adherence to military JAN standards ensures enhanced tolerance to temperature extremes and mechanical stress. With low leakage current and a broad current gain range, it provides precise control in switching and amplification tasks. These advantages make it a preferred choice for engineers focused on long-term system stability and high-performance semiconductor integration.
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Typical Applications
- Industrial control circuits requiring medium power switching and amplification with reliable performance in harsh conditions.
- Aerospace systems where military-grade components are essential for mission-critical signal processing.
- Test and measurement equipment demanding stable gain and low noise characteristics.
- Communication devices that benefit from robust transistor operation under wide temperature ranges.
JANTXV2N7373-Transistor Brand Info
The JANTXV2N7373-Transistor is produced under stringent quality controls conforming to Joint Army-Navy (JAN) military specifications, ensuring exceptional durability and performance. This product line is trusted in defense and industrial sectors for its reliability and consistency. The brand emphasizes robust semiconductor technology engineered to withstand demanding environments, supporting engineers and procurement specialists with dependable sourcing of high-grade bipolar transistors.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current (Ic) for this transistor is rated at 500 mA. This limit ensures safe operation within the device??s power dissipation capabilities, suitable for medium-power switching and amplification tasks.
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Can this transistor operate at high temperatures?
Yes, the transistor is designed to operate reliably in a temperature range from -55??C up to +125??C, making it suitable for use in environments with extreme temperature variations.
What are the typical voltage limits for this transistor?
The transistor has a collector-emitter voltage (Vceo) rating of 80 V and a collector-base voltage (Vcbo) rating of 100 V, allowing it to be used in circuits with moderate voltage requirements.
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How consistent is the current gain (hFE) of this transistor?
The DC current gain ranges between 40 and 160, providing stable and predictable amplification characteristics, which is important for precision analog and switching applications.
Is this transistor suitable for aerospace applications?
Yes, the device meets JAN military standards, which ensures rugged construction and reliability required for aerospace and defense applications involving harsh operational conditions.
