JANTXV2N7368-Transistor Overview
The JANTXV2N7368 transistor is a high-performance bipolar junction transistor (BJT) designed for demanding industrial and military-grade applications. Its robust construction ensures reliable operation under extreme environmental conditions, making it a preferred choice for high-reliability circuits. Featuring a high voltage rating and excellent current handling capability, this device supports efficient amplification and switching in power management and signal processing systems. Available from IC Manufacturer, the component is built to meet stringent quality standards for aerospace, defense, and industrial electronics.
JANTXV2N7368-Transistor Key Features
- High voltage capability: Supports collector-emitter voltages suitable for robust power applications, ensuring stable performance under elevated voltage stress.
- Low saturation voltage: Enables efficient switching with reduced power loss, improving overall circuit efficiency.
- High current gain (hFE): Offers strong amplification characteristics, beneficial in both signal amplification and switching roles.
- Military-grade reliability: Qualified to stringent standards for temperature and durability, making it suitable for harsh environments.
JANTXV2N7368-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 100 | V |
| Collector-Base Voltage (Vcbo) | 140 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 5 | A |
| Power Dissipation (Ptot) | 30 | W |
| Transition Frequency (fT) | 15 | MHz |
| DC Current Gain (hFE) | 40 – 160 | (typical) |
| Operating Junction Temperature (Tj) | -65 to +200 | ??C |
JANTXV2N7368-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage handling and current gain compared to typical small-signal BJTs, enabling higher efficiency and reliability in power amplification and switching circuits. Its military-grade qualification ensures stable operation under extreme temperatures and stress, outperforming commercial-grade alternatives in critical industrial applications. The low saturation voltage also contributes to energy-efficient designs, making it a robust choice where precision and durability are paramount.
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Typical Applications
- Power amplification in communication systems and signal processing circuits requiring stable gain and high voltage tolerance for enhanced signal integrity.
- Switching regulator circuits where efficient power conversion and thermal stability are critical for reliable operation.
- Industrial control systems that demand components capable of withstanding harsh environmental conditions and electrical stress.
- Military and aerospace electronics designed for longevity and robustness under extreme temperature and mechanical stress.
JANTXV2N7368-Transistor Brand Info
The JANTXV2N7368 transistor is part of a well-established product line known for meeting strict military and aerospace standards. Manufactured with rigorous quality control, this transistor ensures dependable performance in high-reliability sectors. The brand focuses on delivering components with proven durability, consistent electrical characteristics, and compliance with military specifications, making it a trusted choice for engineers designing mission-critical systems.
FAQ
What type of transistor is the JANTXV2N7368?
The device is a bipolar junction transistor (BJT) designed primarily for switching and amplification applications in high-reliability environments. It features a silicon NPN structure suitable for industrial and military use.
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What are the maximum voltage ratings for this transistor?
The maximum collector-emitter voltage is 100 volts, and the collector-base voltage rating is 140 volts, enabling its use in circuits with relatively high voltage requirements.
What is the operating temperature range?
The transistor supports an operating junction temperature range from -65??C up to +200??C, making it suitable for applications exposed to extreme temperatures.
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How does the current gain (hFE) affect circuit design?
The DC current gain ranges typically between 40 and 160, allowing designers to achieve effective amplification and switching performance while maintaining control over signal integrity.
Is this transistor suitable for high-frequency applications?
With a transition frequency (fT) of approximately 15 MHz, this transistor can be used in moderate frequency applications but may not be ideal for very high-frequency RF circuits.
