JANTXV2N6678T1-Transistor High-Speed Switching Transistor in TO-220 Package by JANTX

  • This device amplifies electrical signals, enabling improved control in electronic circuits.
  • Its switching capability optimizes performance in high-frequency applications requiring rapid response.
  • The compact package design supports space-efficient PCB layouts in densely packed assemblies.
  • Ideal for use in signal processing tasks, it enhances accuracy and efficiency in measurement systems.
  • Manufactured to meet standard quality controls, it ensures dependable operation over extended periods.
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JANTXV2N6678T1-Transistor Overview

The JANTXV2N6678T1-Transistor is a high-reliability bipolar junction transistor (BJT) designed for demanding industrial and military applications requiring robust switching and amplification performance. Manufactured to meet stringent JAN (Joint Army-Navy) standards, it offers enhanced durability, thermal stability, and consistent electrical characteristics over extended operating ranges. This transistor is ideal for environments where long-term reliability is critical, ensuring stable operation under harsh temperature and mechanical stress conditions. For engineers and sourcing specialists seeking dependable semiconductor components, this transistor delivers proven performance and rugged construction from a trusted IC Manufacturer.

JANTXV2N6678T1-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 60V, enabling use in medium-power switching circuits.
  • Robust collector current capacity: Handles up to 8A continuous collector current, suitable for power amplification and control applications.
  • Military-grade reliability: Qualified to JAN standards, ensuring superior performance in critical defense and aerospace systems.
  • Thermal stability: Maintains electrical parameters across a wide temperature range, enhancing operational consistency.

JANTXV2N6678T1-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 8 A
Power Dissipation (Ptot) 160 W
Gain Bandwidth Product (fT) 8 MHz
DC Current Gain (hFE) 20 – 70 Typical
Operating Junction Temperature (TJ) -65 to +200 ??C

JANTXV2N6678T1-Transistor Advantages vs Typical Alternatives

This transistor stands out for its military-grade qualification, which guarantees enhanced reliability and performance under extreme conditions compared to standard commercial transistors. Its high continuous collector current and voltage ratings provide superior power handling capabilities, while stable gain across a wide temperature range ensures accurate and consistent operation in critical industrial control and switching applications.

Typical Applications

  • Power switching and amplification in military and aerospace electronic systems requiring rugged, reliable transistor components capable of operating under extreme environmental conditions.
  • Industrial motor control circuits that demand high current capacity and thermal stability to maintain performance and safety.
  • High-reliability signal amplification in communication equipment where stable gain and low noise are essential.
  • General-purpose transistor functions in harsh environments, such as defense-grade power supplies and electronic control units.

JANTXV2N6678T1-Transistor Brand Info

The JANTXV2N6678T1-Transistor is produced under strict quality controls to meet Joint Army-Navy (JAN) specifications, reflecting its suitability for critical defense and aerospace applications. This product line is recognized for durability, electrical consistency, and ruggedness, making it a preferred choice among engineers developing systems that cannot compromise on reliability. Backed by a reputable manufacturer specializing in military-grade semiconductors, this transistor offers guaranteed long-term performance in challenging operational environments.

FAQ

What type of transistor is the JANTXV2N6678T1?

The device is an NPN bipolar junction transistor designed for high power and high voltage applications. It is suitable for switching and amplification tasks where durability and stable performance are required.

What are the maximum voltage and current ratings for this transistor?

This transistor supports a collector-emitter voltage up to 60 volts and a continuous collector current of 8 amperes, making it appropriate for medium power circuit designs.

Is the transistor suitable for operation in extreme temperature conditions?

Yes, the transistor is rated to operate reliably over a wide junction temperature range from -65??C to +200??C, which is essential for military and industrial environments.

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What standards does this transistor comply with?

The transistor is qualified to meet Joint Army-Navy (JAN) standards, ensuring it meets strict military reliability and performance criteria for rugged electronic components.

In what applications is the JANTXV2N6678T1 typically used?

This transistor is commonly used in military and aerospace electronics, industrial motor controls, communication systems, and other applications requiring dependable high-power switching and amplification under harsh conditions.

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