JANTXV2N6676T1-Transistor by JANTX | High-Power Switching Transistor | TO-220 Package

  • This transistor controls current flow efficiently, enabling precise amplification and switching in electronic circuits.
  • Its voltage rating supports stable operation under typical load conditions, ensuring signal integrity and device protection.
  • The compact package reduces board space requirements, facilitating high-density circuit designs and easier integration.
  • Ideal for use in signal processing applications, it enhances performance by maintaining consistent response under varying inputs.
  • Manufactured with strict quality controls, the component offers reliable performance and long-term durability in diverse environments.
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JANTXV2N6676T1-Transistor Overview

The JANTXV2N6676T1 is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification in demanding industrial and military-grade applications. It features a durable hermetic metal can package that ensures exceptional reliability under harsh environmental conditions. With a collector-emitter voltage rating up to 80V and a continuous collector current of 8A, this transistor delivers strong current handling capabilities and fast switching speeds. Ideal for power amplification and switching circuits, it is produced under stringent quality standards, making it a dependable choice for engineers and sourcing specialists requiring precision and longevity. For further details, visit IC Manufacturer.

JANTXV2N6676T1-Transistor Key Features

  • High voltage and current rating: Supports up to 80V collector-emitter voltage and 8A continuous current, enabling reliable operation in power-intensive circuits.
  • Hermetic metal can package: Provides enhanced environmental protection, improving durability in extreme temperature and humidity conditions.
  • Fast switching capabilities: Ensures efficient performance in high-frequency amplification and switching applications, reducing power loss.
  • Thermally robust design: Allows operation at junction temperatures up to 200??C, facilitating use in harsh industrial environments.

JANTXV2N6676T1-Transistor Technical Specifications

ParameterSpecification
Transistor TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage, VCEO80 V
Collector-Base Voltage, VCBO100 V
Emitter-Base Voltage, VEBO5 V
Continuous Collector Current, IC8 A
Power Dissipation, PC75 W
Transition Frequency, fT4 MHz
Operating Junction Temperature, TJ-65 to +200 ??C
Package TypeHermetic Metal Can (TO-3)

JANTXV2N6676T1-Transistor Advantages vs Typical Alternatives

This transistor stands out for its superior current handling and high voltage tolerance compared to standard BJTs, allowing for enhanced power amplification and switching efficiency. The hermetic metal can packaging improves long-term reliability, especially in high-temperature or corrosive environments, making it a preferred choice over plastic-encapsulated alternatives. Its robust thermal limits and fast switching speed further ensure consistent performance in critical industrial and military applications.

Typical Applications

  • Power Amplification Circuits: Ideal for audio and RF amplifiers where high current and voltage handling are critical for maintaining signal integrity and output power stability.
  • Switching Regulators: Suitable for use in DC-DC converters and power supply switching due to its fast switching capabilities and thermal resilience.
  • Industrial Motor Controls: Supports efficient switching and control of motors in automation systems, benefiting from its rugged design and high current capacity.
  • Military and Aerospace Electronics: The hermetic packaging and extended temperature range make it well-suited for use in mission-critical environments requiring high reliability.

JANTXV2N6676T1-Transistor Brand Info

The JANTXV2N6676T1 is a specialized transistor developed and supplied by a trusted semiconductor manufacturer known for delivering high-quality, military-grade components. This product line adheres to rigorous testing and quality assurance protocols to meet stringent defense and industrial standards. The brand??s commitment to reliability and performance ensures that this transistor performs consistently in demanding applications, providing engineers and procurement professionals with confidence in system robustness and longevity.

FAQ

What type of transistor is the JANTXV2N6676T1?

The device is an NPN bipolar junction transistor (BJT), designed primarily for switching and amplification tasks in high-current and high-voltage applications.

What is the maximum continuous collector current supported?

This transistor supports a maximum continuous collector current of 8 amps, making it suitable for power-intensive circuits demanding substantial current flow.

What packaging does the transistor use and why is it important?

It uses a hermetic metal can package (TO-3), which provides excellent protection against environmental factors such as moisture and temperature extremes, enhancing reliability and lifespan in harsh operating conditions.

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What are the maximum voltage ratings of this transistor?

The collector-emitter voltage rating is 80V, the collector-base voltage rating is 100V, and the emitter-base voltage is rated at 5V, allowing its use in medium to high voltage applications.

In what temperature range can this transistor reliably operate?

This transistor can operate reliably within a junction temperature range of -65??C to +200??C, supporting use in both extreme cold and high-temperature industrial or military environments.

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