JANTXV2N6352P-Darlington-PIND High-Voltage Darlington Transistor in PIND Package – NXP

JANTXV2N6352P-Darlington-PIND Overview

The JANTXV2N6352P-Darlington-PIND is a high-reliability, dual Darlington transistor designed for industrial and military applications requiring robust switching and amplification performance. This device integrates two Darlington transistor pairs in a single package, ensuring high current gain and low saturation voltage for efficient operation. Its PIND (Particle Impact Noise Detection) testing certifies enhanced ruggedness against mechanical shocks and vibrations, making it ideal for harsh environments. With a collector-emitter voltage rating suitable for demanding circuits, this transistor supports precise control in power management and signal amplification roles. For sourcing and technical specifications, visit IC Manufacturer.

JANTXV2N6352P-Darlington-PIND Technical Specifications

JANTXV2N6352P-Darlington-PIND Key Features

• High current gain: Dual Darlington configuration provides a minimum h_FE of 1000, enabling amplification of weak input signals with minimal input current.
• Low saturation voltage: Ensures efficient switching with reduced power loss, improving overall circuit reliability and thermal management.
• Robust mechanical resilience: PIND testing confirms exceptional resistance to mechanical shock and vibration, critical for aerospace and military-grade electronics.
• Wide operating temperature range: Suitable for extreme environments from -55??C to +125??C, supporting applications with stringent thermal requirements.

Typical Applications

• Power amplification stages in communication and control systems that demand high gain and reliable switching under harsh conditions.
• Industrial automation circuits requiring rugged transistors capable of handling elevated currents with low saturation voltage.
• Military and aerospace electronics where mechanical shock and vibration resistance are essential for maintaining system integrity.
• Signal conditioning and driver circuits in high-reliability environments, benefiting from the device??s dual transistor configuration.

JANTXV2N6352P-Darlington-PIND Advantages vs Typical Alternatives

This device offers superior mechanical robustness due to its PIND-tested design, outperforming typical Darlington transistors without such certification. Its high current gain and low saturation voltage deliver enhanced efficiency and reduced heat dissipation compared to standard bipolar transistors. The TO-39 metal package supports improved thermal conductivity and reliability, making it advantageous for military and industrial applications where long-term durability and precise switching are critical.

JANTXV2N6352P-Darlington-PIND Brand Info

The JANTXV2N6352P-Darlington-PIND is manufactured under JANTX (Joint Army-Navy Transistor eXperimental) standards, ensuring compliance with stringent military specifications for reliability and performance. The JANTX designation signifies ruggedness and quality control per MIL-STD requirements, including PIND testing to detect internal contamination. This transistor is produced by reputable semiconductor manufacturers specializing in military-grade components, trusted for aerospace, defense, and industrial sectors requiring dependable and tested discrete transistors.

FAQ

What does PIND testing mean for this Darlington transistor?

PIND (Particle Impact Noise Detection) testing is a quality assurance process that detects loose particles inside the transistor package. Passing this test ensures the device’s mechanical integrity and reliability in high-vibration environments, which is critical for aerospace and military applications where component failure can have severe consequences.

What is the significance of the JANTX designation on this transistor?

The JANTX prefix indicates that the transistor meets stringent military