JANTXV2N6352-Darlington Transistor – High Gain Amplifier, TO-220 Package

  • Darlington transistor provides high current gain, enabling efficient amplification in switching circuits.
  • Maximum voltage rating ensures safe operation under specified electrical stress conditions.
  • Compact package design supports efficient board layout and space-saving in electronic assemblies.
  • Ideal for driving motors or relays, improving overall system responsiveness and control accuracy.
  • Manufactured to meet quality standards, ensuring consistent performance and long-term reliability.
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JANTXV2N6352-Darlington Overview

The JANTXV2N6352-Darlington is a high-voltage, high-current NPN Darlington transistor designed for demanding switching and amplification applications. Featuring a collector-emitter voltage rating of 100V and a collector current capacity up to 8A, this device delivers robust performance with enhanced gain and ruggedness. Optimized for industrial and power control environments, its complementary design supports reliable operation under elevated temperature and surge conditions. The transistor’s construction conforms to JANTXV military standards, ensuring consistent quality and long-term durability. For precision power management and control, the JANTXV2N6352-Darlington offers engineers a dependable semiconductor solution. Learn more at IC Manufacturer.

JANTXV2N6352-Darlington Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)100V
Collector-Base Voltage (VCBO)120V
Emitter-Base Voltage (VEBO)5V
Collector Current (Continuous) (IC)8A
Collector Current (Peak) (ICM)12A
Power Dissipation (Ptot)75W
DC Current Gain (hFE)1000?C
Transition Frequency (fT)3MHz
Operating Junction Temperature (TJ)-65 to +200??C
PackageTO-218?C

JANTXV2N6352-Darlington Key Features

  • High voltage capability: With a collector-emitter voltage rating of 100V, it supports applications requiring substantial voltage handling without breakdown risk.
  • High current capacity: The transistor can continuously conduct up to 8A, enabling effective control in power-intensive circuits.
  • Exceptional current gain: A DC current gain of approximately 1000 reduces base drive requirements, improving overall circuit efficiency.
  • Rugged and reliable design: Compliance with JANTXV military standards ensures superior durability and performance under harsh operating conditions.
  • Thermal tolerance: Operating junction temperature up to 200??C facilitates use in elevated temperature environments without derating.
  • Robust surge handling: Peak collector current capability of 12A supports transient load conditions typical in motor control and switching power supplies.
  • Low frequency switching: Suitable for applications up to 3 MHz transition frequency, balancing gain and switching speed for industrial uses.

Typical Applications

  • Power switching in industrial automation systems requiring high current and voltage handling with reliable gain characteristics.
  • Motor drive circuits where robust current amplification and surge protection are critical for controlling inductive loads.
  • Relay drivers and solenoid actuators that benefit from the high gain and ruggedness of Darlington transistor configurations.
  • Power supply regulation stages including linear and switching regulators demanding precise control at elevated temperatures.

JANTXV2N6352-Darlington Advantages vs Typical Alternatives

This transistor offers significant advantages over standard bipolar transistors and other Darlington devices by combining high voltage and high current ratings with a very high DC current gain. Its military-grade JANTXV qualification ensures enhanced reliability and longevity in harsh environments, which typical commercial units may not match. The device??s extensive thermal range and surge current capability reduce the risk of failure in power electronics, making it a superior choice for industrial and military applications requiring both precision and ruggedness.

JANTXV2N6352-Darlington Brand Info

The JANTXV2N6352-Darlington is manufactured under the JANT

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