JANTXV2N6301-Darlington Transistor by JAN, High Gain Switching, TO-220 Package

  • This device functions as a Darlington transistor, enabling high current amplification with minimal input signal requirements.
  • Its electrical characteristics support efficient switching, crucial for precise control in electronic circuits.
  • The compact package ensures board-space savings, facilitating integration into densely populated circuit designs.
  • Ideal for motor control applications, it enhances performance by providing robust switching capabilities.
  • Manufactured to meet industry standards, it offers dependable operation under various environmental conditions.
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JANTXV2N6301-Darlington Overview

The JANTXV2N6301-Darlington is a robust high-voltage Darlington transistor designed for demanding industrial and military applications. Featuring a high collector-emitter voltage rating and enhanced current gain, this device provides reliable switching and amplification functions in harsh environments. Its construction meets stringent military standards, ensuring durability and consistent performance under extreme conditions. Engineers and sourcing specialists will appreciate its combination of precision, ruggedness, and compatibility with a wide range of power control circuits. For detailed sourcing and technical support, visit IC Manufacturer.

JANTXV2N6301-Darlington Key Features

  • High Voltage Capability: With a collector-emitter voltage rating of 400 V, it supports applications requiring robust voltage handling, minimizing the risk of breakdown.
  • Enhanced Current Gain: The device exhibits a high DC current gain, improving signal amplification efficiency and reducing the required base drive current.
  • Military-Grade Reliability: Qualified to JAN standards, ensuring dependable operation in severe environments and strict quality control for mission-critical systems.
  • Darlington Configuration: Provides high input impedance and improved switching performance, making it ideal for power amplification and control in industrial electronics.

JANTXV2N6301-Darlington Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (VCEO)400 V
Collector Current (IC)4 A continuous
DC Current Gain (hFE)Minimum 1000 at IC = 1 A
Emitter-Base Voltage (VEBO)5 V
Power Dissipation (PD)30 W (at 25??C)
Transition Frequency (fT)4 MHz typical
Operating Temperature Range-65??C to +200??C
Package TypeTO-39 Metal Can

JANTXV2N6301-Darlington Advantages vs Typical Alternatives

This Darlington transistor offers superior voltage and current ratings compared to typical low-power alternatives, making it ideal for high-reliability industrial and military systems. Its enhanced current gain reduces input drive requirements, enabling more efficient circuit designs. Furthermore, its rugged construction and compliance with JAN military specifications ensure long-term stability and performance in harsh environments where standard commercial transistors may fail.

Typical Applications

  • High voltage power switching in industrial control systems, where reliable amplification and voltage tolerance are critical for system integrity and performance.
  • Military and aerospace electronics requiring components that meet strict reliability standards for operation in extreme environmental conditions.
  • Amplifier circuits in power management units that benefit from the device??s high current gain and low input current requirements.
  • Load drivers and relay control circuits demanding robust switching with minimal signal loss under varying load conditions.

JANTXV2N6301-Darlington Brand Info

The JANTXV2N6301-Darlington is produced under the JAN (Joint Army-Navy) standard, a hallmark of military-grade semiconductor devices. This certification guarantees that the transistor meets rigorous quality, testing, and reliability criteria, making it suitable for defense and aerospace applications. Designed and manufactured with precision, it exemplifies the highest standards of durability and performance expected from JAN-certified components, trusted by engineers who require fail-safe operation in critical systems.

FAQ

What is the maximum collector-emitter voltage for this Darlington transistor?

The maximum collector-emitter voltage is rated at 400 V, allowing this device to handle high-voltage applications safely without risk of breakdown under specified operating conditions.

How does the high current gain benefit circuit design?

A high DC current gain reduces the base drive current needed to switch or amplify signals, which increases circuit efficiency and lowers power consumption in the driving stage, simplifying the overall design.

What operating temperature range does the transistor support?

This device operates reliably from -65??C up to +200??C, making it suitable for extreme temperature environments often encountered in military and industrial applications.

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What package type is used for the JANTXV2N6301-Darlington?

The transistor is housed in a TO-39 metal can package, providing excellent thermal conductivity and mechanical protection for enhanced durability and heat dissipation.

Is this transistor suitable for aerospace applications?

Yes, the device meets JAN military standards, ensuring it can withstand the rigorous testing and reliability requirements typical in aerospace and defense electronic systems.

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