JANTXV2N6032-Transistor NPN High-Speed Switching TO-220 Package by ON Semiconductor

  • This transistor amplifies or switches electronic signals, enabling precise control in circuits.
  • High voltage tolerance ensures stable performance under demanding electrical conditions.
  • Its compact package reduces board space, facilitating integration into dense electronic assemblies.
  • Ideal for signal processing tasks in communication devices, improving signal clarity and efficiency.
  • Manufactured to meet industry standards, ensuring consistent reliability and long-term operation.
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JANTXV2N6032-Transistor Overview

The JANTXV2N6032 is a high-voltage NPN bipolar junction transistor designed for demanding industrial and military applications. It features a collector-emitter voltage rating of 400V and a collector current capacity of up to 8A, making it suitable for power switching and amplification tasks. This transistor’s robust construction and performance stability across temperature ranges ensure reliable operation in harsh environments. Ideal for power regulation and control circuits, this device supports efficient energy management and enhanced circuit durability. For detailed specifications and technical support, please visit the IC Manufacturer.

JANTXV2N6032-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)400V
Collector-Base Voltage (VCBO)700V
Emitter-Base Voltage (VEBO)7V
Collector Current (IC)8A
Power Dissipation (Ptot)115W
Gain Bandwidth Product (fT)12MHz
DC Current Gain (hFE)20 – 70??
Operating Junction Temperature (TJ)-65 to +200??C

JANTXV2N6032-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage rating of 400V, it supports high-voltage switching applications without compromising device integrity.
  • Substantial collector current capacity: Supports up to 8A continuous collector current, enabling efficient power handling in demanding circuits.
  • Wide operating temperature range: Reliable function from -65??C to +200??C ensures stable performance in extreme industrial environments.
  • Moderate gain bandwidth product: 12 MHz bandwidth supports moderate-speed switching and amplification tasks, balancing speed and power efficiency.
  • Robust power dissipation capability: 115W maximum power dissipation facilitates high-power applications with enhanced thermal management.
  • Military-grade packaging: JAN (Joint Army-Navy) standard ensures ruggedness, reliability, and compliance with stringent quality requirements.
  • Consistent DC current gain: Gain range from 20 to 70 supports precise control of output current in analog and switching circuits.

Typical Applications

  • Power amplifiers in industrial control systems where high voltage and current capacity are essential for driving heavy loads and actuators.
  • Switching regulators and power conversion circuits, benefiting from the transistor??s ability to handle high power dissipation efficiently.
  • Military and aerospace electronics requiring reliable, rugged transistors capable of operating across wide temperature ranges and harsh environments.
  • High-voltage pulse circuits and motor control applications where robust switching and amplification performance enhance system stability.

JANTXV2N6032-Transistor Advantages vs Typical Alternatives

This transistor excels over typical alternatives by combining a high collector-emitter voltage with a strong continuous current rating, ensuring superior power handling with enhanced reliability. Its wide operating temperature range and compliance with military JAN standards provide engineers confidence for long-term use in critical applications. The balance of gain and bandwidth offers versatility for both switching and amplification, reducing the need for multiple devices in complex circuits.

JANTXV2N6032-Transistor Brand Info

The JANTXV2N6032 transistor is manufactured under the JAN (Joint Army-Navy) certification, a hallmark for high-reliability semiconductor devices built to military specifications

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