The JANTXV2N5686-Transistor is a high-performance silicon NPN bipolar junction transistor designed for military and aerospace applications requiring enhanced reliability and ruggedness. It operates within a wide voltage range and supports moderate power dissipation, making it ideal for switching and amplification tasks in harsh environments. This transistor meets stringent JAN (Joint Army-Navy) quality standards, ensuring stable operation under extreme temperature and mechanical stress. Its robust construction and precise electrical characteristics make it a preferred choice for critical defense and industrial electronics systems. For detailed product sourcing and technical support, visit IC Manufacturer.
JANTXV2N5686-Transistor Technical Specifications
Parameter
Specification
Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
45 V
Collector-Base Voltage (VCBO)
60 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC)
800 mA
Power Dissipation (PD)
625 mW
DC Current Gain (hFE)
100 to 300
Transition Frequency (fT)
100 MHz
Operating Temperature Range
-55??C to +125??C
JANTXV2N5686-Transistor Key Features
Enhanced Reliability: Built to meet rigorous military standards, ensuring consistent performance in extreme temperature and mechanical stress conditions.
High Voltage Tolerance: Supports collector-emitter voltages up to 45 V, enabling use in moderate voltage switching and amplification circuits.
Stable Current Gain: Offers a reliable DC current gain range of 100 to 300, providing predictable amplification for analog signal processing.
High Transition Frequency: Operates efficiently up to 100 MHz, suitable for RF and high-speed switching applications.
Compact Power Dissipation: Handles power dissipation up to 625 mW, balancing performance and thermal management for embedded systems.
Wide Temperature Range: Operational between -55??C and +125??C, making it ideal for aerospace and defense environments.
Typical Applications
High-reliability analog amplification circuits in aerospace and military communication devices, where stable gain and ruggedness are critical.
Switching applications in industrial control systems requiring consistent operation under temperature extremes.
RF signal amplification at frequencies up to 100 MHz in defense radar and telemetry equipment.
Embedded electronics in harsh environments, such as avionics and weapon systems, needing dependable transistor performance.
JANTXV2N5686-Transistor Advantages vs Typical Alternatives
This transistor offers notable advantages in reliability and performance for military-grade electronics compared to standard commercial transistors. Its certified JAN qualification ensures superior resistance to thermal and mechanical stress, enhancing system longevity. The wide operating temperature range and stable current gain provide accuracy and precision in demanding signal amplification tasks. Its moderate voltage and power ratings strike a balance between efficiency and ruggedness, making it a preferred choice for engineers prioritizing durability and dependable operation in critical applications.
The JANTXV2N5686-Transistor is produced under the JAN (Joint Army-Navy) military specification, which governs components designed for defense and aerospace use. This designation reflects strict quality assurance and traceability protocols, ensuring that each device meets stringent environmental and electrical standards. Manufacturers producing this transistor follow rigorous screening and testing processes to comply with the MIL-PRF-19500 standard. Consequently, the transistor is trusted by military contractors and aerospace engineers for mission-critical system integration where failure is not an option.
