JANTXV2N5679-Transistor by JANTX | High-Speed Switching Transistor | TO-220 Package

  • This transistor amplifies electrical signals efficiently, enabling precise control in various electronic circuits.
  • High voltage tolerance ensures stable operation under demanding conditions, preventing circuit failure.
  • Its compact package design supports board-space savings, facilitating integration into dense layouts.
  • Ideal for switching applications in power management, improving system responsiveness and efficiency.
  • Manufactured following strict quality protocols, ensuring consistent performance and long-term reliability.
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产品上方询盘

JANTXV2N5679-Transistor Overview

The JANTXV2N5679-Transistor is a high-performance bipolar junction transistor designed for demanding industrial and military applications requiring enhanced reliability and robustness. This transistor exhibits exceptional gain characteristics, voltage handling, and current capacity, making it suitable for amplification and switching tasks under harsh environmental conditions. It complies with stringent JAN (Joint Army-Navy) standards, ensuring durability and long-term stability. Engineers and sourcing specialists can rely on this device for precision analog circuitry, power regulation, and signal amplification. For detailed procurement and technical information, visit IC Manufacturer.

JANTXV2N5679-Transistor Key Features

  • High Current Gain: Provides consistent amplification with a typical hFE of 50 to 150, optimizing signal integrity in analog circuits.
  • Robust Voltage Rating: Supports collector-emitter voltages up to 80V, enabling reliable operation in high-voltage switching environments.
  • Military-Grade Qualification: Manufactured to meet JAN standards, ensuring enhanced reliability and performance under extreme temperature and stress conditions.
  • Low Noise Characteristics: Minimizes interference in sensitive signal processing applications, improving overall circuit accuracy.

JANTXV2N5679-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 80 V
Collector-Base Voltage (Vcbo) 100 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 3 A
Power Dissipation (Ptot) 1 W
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 50 to 150 ??
Operating Junction Temperature (Tj) -65 to +200 ??C
Package Type TO-18 Metal Can ??

JANTXV2N5679-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and stability under extreme environmental conditions compared to standard commercial devices. Its military-grade certification ensures consistent performance with low noise and high gain over a wide temperature range. These attributes make it preferable for critical analog and switching functions where typical alternatives may fail due to lower voltage ratings or reduced thermal tolerance.

Typical Applications

  • Precision amplification in aerospace and defense systems requiring stable gain and high voltage tolerance across temperature extremes.
  • Switching components in ruggedized industrial control systems where reliability and noise minimization are critical.
  • Signal processing circuits in military communication devices necessitating low noise and consistent frequency response.
  • Power regulation modules in harsh environments, leveraging the transistor??s robust voltage and current capabilities.

JANTXV2N5679-Transistor Brand Info

The JANTXV2N5679-Transistor is a product designed to meet the rigorous standards set by military and aerospace sectors. Produced under strict quality controls, this transistor is part of a family of JAN-qualified components known for their durability and superior electrical characteristics. The product??s robust construction and verified performance metrics make it a trusted choice for engineers specifying components for mission-critical electronic systems.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current is rated at 3 amperes, allowing this transistor to handle moderate power levels suitable for various amplification and switching applications in industrial and military environments.

What temperature range can the transistor reliably operate within?

This device supports an operating junction temperature range from -65??C up to +200??C, ensuring stable operation in extreme thermal conditions typical of aerospace and defense applications.

How does the gain bandwidth product affect performance?

The gain bandwidth product of 100 MHz indicates the transistor??s ability to amplify signals effectively at high frequencies, which is essential for high-speed switching and RF amplification tasks.

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产品中间询盘

What package type is used for this transistor and why is it important?

The transistor is housed in a TO-18 metal can package, providing excellent thermal conductivity and mechanical protection, which are vital for sustaining performance in harsh environments.

Is this transistor suitable for low-noise amplifier designs?

Yes, the low noise characteristics of this transistor make it well-suited for low-noise amplifier circuits where signal integrity and minimal interference are critical requirements.

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