JANTXV2N5666-Transistor Overview
The JANTXV2N5666-Transistor is a high-performance NPN bipolar junction transistor designed for demanding amplification and switching applications. Rated for a collector-emitter voltage of 80V and a continuous collector current of 5A, it offers robust power handling and reliable operation in industrial environments. This transistor features a DC current gain (hFE) suitable for amplification tasks, and its TO-39 metal can package ensures excellent thermal dissipation. Engineered for durability and precision, the device supports diverse power electronics designs, making it a dependable choice for engineers and sourcing specialists seeking consistent and efficient semiconductor components. For more detailed component information, visit IC Manufacturer.
JANTXV2N5666-Transistor Key Features
- High Collector Current Capacity: Supports up to 5A continuous collector current, enabling effective handling of high-power loads.
- High Voltage Tolerance: With a collector-emitter voltage rating of 80V, it provides reliable switching in medium voltage circuits.
- Moderate DC Current Gain (hFE): The gain range of 40 to 160 ensures stable amplification performance across various biasing conditions.
- Robust TO-39 Metal Can Package: Offers superior heat dissipation and mechanical durability, improving reliability in harsh industrial settings.
JANTXV2N5666-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (V_CEO) | 80 | V |
| Collector-Base Voltage (V_CBO) | 100 | V |
| Emitter-Base Voltage (V_EBO) | 5 | V |
| Collector Current Continuous (I_C) | 5 | A |
| DC Current Gain (hFE) | 40 to 160 | ?? |
| Power Dissipation (P_TOT) | 40 | W |
| Transition Frequency (f_T) | 100 | MHz |
| Package Type | TO-39 | ?? |
JANTXV2N5666-Transistor Advantages vs Typical Alternatives
This transistor delivers a balanced combination of voltage and current ratings with reliable gain characteristics, making it ideal for power amplification and control circuits. Compared to typical alternatives, its TO-39 package enhances thermal management and long-term stability. The wide hFE range supports flexible circuit design, while its voltage tolerance reduces the risk of breakdown in demanding industrial applications. Overall, it provides dependable performance, efficiency, and integration ease in medium-power semiconductor solutions.
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Typical Applications
- Power Amplifiers: Suitable for medium-power audio and RF amplification requiring stable gain and high current handling capabilities.
- Switching Regulators: Effective in voltage regulation and power conversion circuits where efficient switching is critical.
- Industrial Control Systems: Used in relay drivers, motor controllers, and other industrial automation circuits due to robust electrical ratings.
- General Purpose Amplification: Applicable in a variety of signal amplification tasks within industrial and consumer electronics.
JANTXV2N5666-Transistor Brand Info
The JANTXV2N5666-Transistor is part of a proven line of discrete semiconductor devices designed to meet the rigorous demands of industrial and commercial electronics. Manufactured under stringent quality controls, this transistor ensures consistent electrical performance and mechanical reliability. Its design incorporates a high-quality TO-39 package, widely recognized for thermal efficiency and durability. This product is engineered to support engineers and sourcing specialists in deploying reliable components that comply with industry standards and operational requirements.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current rating is 5 amperes, making it suitable for medium-power switching and amplification applications where substantial current flow is required.
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Can this transistor handle high voltage applications?
Yes, it supports a collector-emitter voltage of up to 80 volts and a collector-base voltage of 100 volts, allowing it to operate safely in moderate voltage environments typical in industrial circuits.
What type of package is used for this transistor, and why is it important?
This transistor uses a TO-39 metal can package, which provides excellent thermal dissipation and mechanical robustness. This packaging improves reliability under thermal stress and extends device lifespan in demanding applications.
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What range of DC current gain (hFE) does this transistor provide?
The device offers a DC current gain ranging from 40 to 160, enabling flexible circuit design and stable amplification performance across different operating conditions.
Is this transistor suitable for high-frequency applications?
With a transition frequency (fT) of approximately 100 MHz, this transistor is capable of operating effectively in many moderate to high-frequency circuits, including RF amplification and switching functions.
