JANTXV2N5663U3-Transistor – NPN Bipolar Junction Transistor, TO-220 Package

JANTXV2N5663U3-Transistor Overview

The JANTXV2N5663U3-Transistor is a robust silicon NPN bipolar junction transistor (BJT) designed for high-reliability applications in demanding industrial environments. This transistor offers enhanced voltage and current handling capabilities, making it suitable for switching and amplification tasks where performance and durability are critical. Its hermetically sealed metal can package ensures long-term stability under harsh conditions. Engineers and sourcing specialists can rely on this device for consistent electrical characteristics, low noise, and reliable operation in aerospace, military, and industrial control systems. For detailed product sourcing and technical support, refer to IC Manufacturer.

JANTXV2N5663U3-Transistor Technical Specifications

JANTXV2N5663U3-Transistor Key Features

• High voltage tolerance: Supports collector-emitter voltages up to 100 V, enabling use in high-voltage switching circuits with improved safety margins.
• Robust current handling: Capable of continuous collector currents up to 5 A, making it suitable for power amplification and drive stages.
• Hermetically sealed metal can package: Provides superior protection against environmental contaminants and mechanical stress, ensuring long-term reliability.
• Wide operating temperature range: Functions reliably from -55??C to +200??C, ideal for aerospace and military environments with extreme temperature fluctuations.

Typical Applications

• Power amplification in aerospace communication equipment where high gain and reliability are essential under stringent environmental conditions.
• Switching elements in industrial motor control systems requiring robust handling of high voltages and currents.
• Military-grade signal processing circuits where hermetic sealing and temperature tolerance ensure mission-critical dependability.
• High-reliability test and measurement instrumentation that demands consistent transistor performance over extended periods and harsh environments.

JANTXV2N5663U3-Transistor Advantages vs Typical Alternatives

This transistor distinguishes itself from typical alternatives through its combination of high voltage and current ratings along with a hermetically sealed metal can package. These features provide enhanced environmental resistance, temperature tolerance, and electrical stability, which are crucial for industrial and military applications. Its broad operating temperature range and robust packaging result in greater reliability and longevity compared to standard plastic-encapsulated BJTs, making it a preferred choice for high-reliability electronic designs.

JANTXV2N5663U3-Transistor Brand Info

The JANTXV2N5663U3-Transistor is manufactured under the JAN (Joint Army-Navy) specification, which guarantees rigorous quality and reliability standards for military and aerospace applications. This device complies with stringent requirements for electrical performance, mechanical robustness, and environmental endurance. The product is typically supplied by specialized semiconductor manufacturers that focus on high-reliability discrete components. The JAN designation ensures traceability and conformance to MIL-STD certifications, making it trusted in defense and critical industrial sectors.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current for this transistor is rated at 5 amperes. This high current capacity allows it to be used in power amplification and switching applications where substantial current flow is required without compromising performance.

How does the hermetic TO-39 package benefit the transistor’s reliability?

The hermetically sealed TO-39 metal can protects the internal semiconductor