JANTXV2N5660U3-Transistor High-Speed Switching NPN Transistor in TO-220 Package

JANTXV2N5660U3-Transistor Overview

The JANTXV2N5660U3 is a robust NPN bipolar junction transistor designed for high-reliability applications requiring consistent performance under demanding conditions. Featuring a high voltage rating and capable of handling substantial collector currents, it is optimized for switching and amplification in industrial, military, and aerospace environments. Its hermetically sealed TO-39 metal can package ensures superior thermal stability and long-term durability. Sourced from IC Manufacturer, this transistor is ideal for engineers and sourcing specialists seeking a dependable, high-performance transistor solution for rugged applications.

JANTXV2N5660U3-Transistor Technical Specifications

JANTXV2N5660U3-Transistor Key Features

• High voltage capability: Supports collector-emitter voltages up to 80 V, enabling use in demanding power management circuits.
• High pulse collector current: Can handle up to 10 A in pulse mode, allowing for effective switching of inductive loads and power stages.
• Hermetic TO-39 packaging: Provides excellent thermal dissipation and environmental protection, ensuring reliability in harsh industrial and aerospace settings.
• Wide DC gain range: Offers flexibility in circuit design with gain values between 40 and 160, facilitating stable amplification performance.

Typical Applications

• Power switching circuits in industrial automation requiring robust, high-current transistor performance with reliable thermal management.
• Signal amplification stages in military and aerospace electronic systems demanding stable operation under temperature extremes.
• High-reliability control circuits in instrumentation and measurement devices where long-term durability is critical.
• Pulse switching in power supplies and motor drive controllers benefiting from the transistor??s high pulse current capability.

JANTXV2N5660U3-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and thermal stability compared to standard plastic-packaged alternatives due to its hermetic metal can design. Its higher breakdown voltages and ability to handle significant pulse currents make it ideal for demanding industrial and military applications. The broad gain range and robust packaging ensure consistent performance, reducing failure rates and maintenance costs in critical electronic systems.

JANTXV2N5660U3-Transistor Brand Info

The JANTXV2N5660U3 is manufactured by a leading semiconductor supplier specializing in high-reliability discrete components for defense and industrial markets. This product is part of their JAN (Joint Army-Navy) series, indicating compliance with military specifications for quality and durability. The brand is recognized for stringent quality control, hermetically sealed packaging, and products designed to meet rigorous environmental and electrical standards for aerospace, defense, and industrial electronics applications.

FAQ

What type of transistor is the JANTXV2N5660U3?

The device is an NPN bipolar junction transistor (BJT) designed for high-voltage and high-current switching and amplification applications. It is packaged in a hermetic TO-39 metal can to ensure durability and thermal stability.

What are the maximum voltage ratings for this transistor?

The transistor supports a collector-emitter voltage (Vceo) of up to 80 volts and a collector-base voltage (Vcbo) of 100 volts, making it suitable for various high-voltage applications.

Can the transistor handle high current loads?

Yes, it can handle pulse collector currents up to 10 amperes, which makes it suitable for switching inductive loads or transient power demands in industrial circuits.