JANTXV2N5660-Transistor High-Speed Switching Transistor in TO-220 Package by JANTX

  • This transistor amplifies electrical signals, enabling efficient control in electronic circuits.
  • It supports high voltage operation, ensuring reliable performance under demanding conditions.
  • The compact package reduces board space, facilitating dense circuit designs and easier integration.
  • Ideal for switching applications, it provides fast response times to improve overall system efficiency.
  • Manufactured to meet strict quality standards, it assures long-term reliability in various environments.
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产品上方询盘

JANTXV2N5660-Transistor Overview

The JANTXV2N5660-Transistor is a high-reliability NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality standards. It features a collector-emitter voltage rating of 60V and a continuous collector current of 8A, making it suitable for power amplification and switching tasks under harsh environmental conditions. The device complies with JAN (Joint Army-Navy) specifications, ensuring robustness and consistency for critical applications. This transistor is optimized for high gain and low saturation voltage, contributing to efficient electronic circuit performance. For sourcing and detailed technical support, visit IC Manufacturer.

JANTXV2N5660-Transistor Key Features

  • High collector current (8A) capability enables reliable operation in power switching and amplification roles, reducing the need for parallel components.
  • Collector-emitter voltage rating of 60V ensures safe operation in medium-voltage circuits, enhancing device versatility.
  • JAN military-grade qualification guarantees superior reliability and performance in extreme temperature and mechanical stress environments.
  • Low saturation voltage contributes to improved efficiency by minimizing power losses during transistor conduction phases.

JANTXV2N5660-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 60 V
Collector Current (Ic) 8 A (continuous)
Power Dissipation (Pd) 50 W
Gain Bandwidth Product (fT) 15 MHz
DC Current Gain (hFE) 40 to 160
Operating Temperature Range -55??C to +200??C
Packaging TO-3 Metal Can

JANTXV2N5660-Transistor Advantages vs Typical Alternatives

This transistor outperforms typical commercial alternatives by offering military-grade reliability and extended temperature range, making it ideal for demanding aerospace and defense applications. Its high collector current and voltage ratings provide increased power handling with lower saturation voltage, improving efficiency and reducing thermal stress. The robust TO-3 metal package ensures excellent heat dissipation, enhancing long-term operational stability compared to standard plastic-encapsulated transistors.

Typical Applications

  • Power amplification in military communication systems, where reliable high current and voltage handling are critical for signal integrity and durability under harsh conditions.
  • Switching devices in aerospace control circuits requiring precise and rugged transistor operation over wide temperature ranges.
  • Industrial power regulation systems where high power dissipation and stable gain characteristics are needed.
  • High-reliability electronic assemblies in defense equipment that demand JAN-qualified components for guaranteed performance.

JANTXV2N5660-Transistor Brand Info

The JANTXV2N5660-Transistor is offered under strict military specifications, reflecting a commitment to quality and performance excellence. It is manufactured to meet the Joint Army-Navy (JAN) standards, which specify rigorous testing for environmental tolerance and electrical consistency. The device is trusted by defense contractors and aerospace engineers for its dependable operation in critical systems. Its metal can TO-3 packaging not only ensures durability but also facilitates effective thermal management in demanding applications.

FAQ

What is the maximum collector current for this transistor?

The maximum continuous collector current rating is 8 Amperes, allowing the device to handle significant power levels in amplification and switching circuits without degradation.

Can this transistor operate in extreme temperature environments?

Yes, it is qualified to operate within a temperature range from -55??C to +200??C, making it suitable for military and aerospace applications that experience harsh environmental conditions.

What packaging format does this transistor use, and why is it important?

This transistor uses a TO-3 metal can package, which is essential for excellent heat dissipation and mechanical protection, ensuring reliable performance under high power and stress conditions.

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产品中间询盘

How does the transistor??s gain bandwidth product affect its performance?

With a gain bandwidth product of 15 MHz, the transistor supports moderate frequency amplification, allowing it to perform effectively in control and signal processing applications requiring stable gain at these frequencies.

What standards does this transistor comply with?

The device complies with JAN (Joint Army-Navy) military standards, ensuring it meets strict quality, reliability, and performance criteria for defense and aerospace use cases.

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