JANTXV2N5581-Transistor by JANTX ?C High-Power Switching Transistor, TO-3 Package

JANTXV2N5581-Transistor Overview

The JANTXV2N5581 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding military and aerospace applications. Featuring a robust hermetically sealed metal can package, it offers excellent thermal stability and enhanced durability under harsh environmental conditions. This transistor supports medium power amplification and switching with assured performance at elevated temperatures, making it suitable for critical defense and industrial systems. Sourced from a trusted IC Manufacturer, the device complies with stringent JAN (Joint Army-Navy) standards for quality and reliability.

JANTXV2N5581-Transistor Key Features

• Hermetic metal can packaging: Ensures protection from moisture and contaminants, enhancing long-term reliability in rugged environments.
• High collector current capability: Supports up to 1.5 A, enabling effective medium power amplification and switching tasks.
• Wide operating temperature range: From -55??C to +200??C, suitable for extreme temperature conditions typical in aerospace and military applications.
• Low noise figure: Ideal for low-level signal amplification, improving signal integrity in sensitive systems.

JANTXV2N5581-Transistor Technical Specifications

JANTXV2N5581-Transistor Advantages vs Typical Alternatives

The transistor offers superior reliability and thermal performance compared to standard commercial BJTs due to its hermetic metal can packaging and extended temperature range. Its ability to maintain stable gain and low noise in harsh environments makes it a preferred choice for military-grade applications where durability and signal fidelity are critical. This device??s high collector current capacity also provides enhanced power handling versus typical low-power transistors.

Typical Applications

• Military and aerospace electronic circuits requiring reliable medium power amplification and switching under extreme temperature and environmental stresses.
• High-frequency RF amplification in defense communication systems.
• Precision instrumentation circuits demanding low noise performance and long-term stability.
• Harsh environment industrial controls exposed to moisture, vibration, and temperature extremes.

JANTXV2N5581-Transistor Brand Info

This transistor is manufactured under rigorous Joint Army-Navy (JAN) standards, ensuring compliance with military specifications for reliability and quality. The product is part of a specialized line of hermetically sealed BJTs designed for high-performance applications where failure is not an option. Its production and testing follow strict protocols to meet the demands of aerospace, defense, and critical industrial sectors.

FAQ

What is the maximum collector current rating for this transistor?

The transistor can handle a maximum continuous collector current of 1.5 amperes, supporting medium power amplification and switching applications without compromising reliability.

Can this transistor operate at high temperatures?

Yes, it is rated to operate across a wide temperature range from -55??C to +200??C, making it suitable for extreme environmental conditions found in military and aerospace systems.

What package type does this transistor use?

The device is housed in a hermetic metal can package, specifically a TO-18 style, which provides excellent protection against moisture, dust, and mechanical stress.

Is this transistor suitable for RF applications?

Yes, with a gain bandwidth product of approximately 100 MHz and low noise characteristics, it supports medium-frequency RF amplification tasks commonly required in communication equipment.

How does the hermetic packaging benefit the transistor’s performance?

Hermetic sealing ensures long-term reliability by preventing ingress of moisture and contaminants, which can degrade semiconductor junctions. This is critical in harsh environments where conventional plastic packages may fail.