JANTXV2N5416UA-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enhancing circuit performance in various electronic devices.
  • It features a voltage rating that ensures stable operation under typical load conditions.
  • The compact package reduces board space, facilitating efficient hardware design and assembly.
  • Ideal for switching applications, it supports precise control in power management systems.
  • Manufactured with quality standards that promote consistent reliability and long-term durability.
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JANTXV2N5416UA-Transistor Overview

The JANTXV2N5416UA transistor is a high-reliability NPN silicon device designed for demanding military and aerospace applications. This transistor conforms to JAN (Joint Army-Navy) standards, ensuring enhanced ruggedness and performance under extreme environmental conditions. It features a high collector-base voltage rating, supporting robust switching and amplification tasks in high-voltage circuits. The device’s superior gain characteristics and low leakage currents make it suitable for precision analog and digital designs. Available in a hermetically sealed TO-18 metal can package, it offers excellent thermal stability and long operational life, making it a preferred choice for engineers and sourcing specialists focused on durability and performance. For more details, visit IC Manufacturer.

JANTXV2N5416UA-Transistor Technical Specifications

Parameter Value
Type NPN Silicon Transistor
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 3 A (pulse)
Power Dissipation (PD) 1.0 W (at 25??C)
DC Current Gain (hFE) 30 to 100 (at IC = 150 mA)
Transition Frequency (fT) 30 MHz (typical)
Package Hermetically Sealed TO-18 Metal Can
Operating Temperature Range -65??C to +200??C (JANTXV grade)

JANTXV2N5416UA-Transistor Key Features

  • High Voltage Capability: Supports up to 100 V collector-base voltage, enabling use in demanding high-voltage switching and amplification circuits.
  • Enhanced Reliability: Meets stringent JAN military specifications, ensuring ruggedness under extreme temperatures and mechanical stress.
  • Hermetic Sealing: TO-18 metal can package provides excellent protection against moisture and contaminants, enhancing device longevity.
  • Stable Gain Performance: Offers consistent DC current gain across a wide temperature range, improving circuit predictability.

Typical Applications

  • Military and aerospace analog signal amplification where high reliability and temperature resilience are critical.
  • High-voltage switching circuits requiring robust transistors with reliable electrical characteristics.
  • Precision instrumentation in harsh environments benefiting from low leakage and stable gain.
  • Power regulation and control circuits in defense systems demanding rugged semiconductor components.

JANTXV2N5416UA-Transistor Advantages vs Typical Alternatives

This transistor stands out against typical commercial alternatives with its JAN military-grade certification, providing superior reliability and stability under extreme temperatures and mechanical stress. Its hermetic TO-18 metal package ensures long-term protection from environmental factors, while high voltage ratings enable handling demanding circuit requirements. These features deliver enhanced operational durability and consistent performance where standard transistors may fail or degrade.

JANTXV2N5416UA-Transistor Brand Info

The JANTXV2N5416UA is produced under the Joint Army-Navy (JAN) standard, a mark of military-grade quality recognized across defense and aerospace sectors. This classification indicates rigorous testing and quality assurance processes that exceed commercial transistor standards. Typically supplied by established semiconductor manufacturers specializing in military components, this transistor is trusted for mission-critical applications requiring reliable, long-life performance in challenging environments.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating for this device is 3 A in pulse operation. Designers should consult datasheets for continuous current limits and

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