JANTXV2N5416-Transistor Overview
The JANTXV2N5416 transistor is a high-performance NPN bipolar junction transistor designed for military and aerospace applications requiring stringent reliability and stability. Manufactured to JAN (Joint Army-Navy) standards, this transistor offers robust voltage and current handling capabilities, making it suitable for demanding environments. It delivers consistent gain and switching performance under elevated temperature and high-stress conditions. Ideal for amplification and switching tasks, it provides dependable operation in mission-critical systems. Available through IC Manufacturer, this transistor supports complex industrial and defense electronics with proven ruggedness and precision.
JANTXV2N5416-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 8 A (max continuous) |
| Power Dissipation (Ptot) | 75 W (max) |
| Gain Bandwidth Product (fT) | ?? 4 MHz |
| DC Current Gain (hFE) | 40 – 160 |
| Junction Temperature (TJ) | -65??C to +200??C |
JANTXV2N5416-Transistor Key Features
- High voltage rating up to 100 V ensures reliable switching and amplification in high-power circuits.
- Continuous collector current capability of 8 A supports robust load driving for industrial and defense electronics.
- Wide operating temperature range from -65??C to +200??C, guaranteeing performance in harsh environments.
- JAN standard qualification certifies reliability and ruggedness for military-grade applications.
- Stable DC current gain between 40 and 160 facilitates predictable amplification across diverse circuit conditions.
- Low noise characteristics enhance signal fidelity in sensitive analog applications.
Typical Applications
- Power amplification stages in communication and radar systems where high voltage and current capability are critical for signal integrity.
- Switching elements in aerospace control circuits requiring reliable operation over wide temperature ranges.
- Military-grade electronic assemblies demanding adherence to JAN specifications for durability and performance.
- Industrial motor controls and power regulation systems benefiting from its high power dissipation and robust current handling.
JANTXV2N5416-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its compliance with JAN military standards, offering superior reliability and ruggedness compared to commercial-grade alternatives. Its high voltage and current ratings allow for integration into demanding power circuits, while the wide temperature range supports harsh environment operation. The combination of stable gain and low noise improves circuit accuracy and sensitivity, making it a preferred choice for mission-critical industrial and defense applications.
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JANTXV2N5416-Transistor Brand Info
The JANTXV2N5416 transistor is produced under rigorous military specifications by manufacturers specializing in high-reliability semiconductor devices. The JAN (Joint Army-Navy) designation indicates strict quality controls and screening processes that exceed typical commercial standards. This device is commonly available from legacy semiconductor manufacturers and specialized suppliers focused on defense and aerospace markets. Its brand reputation centers on durability, performance consistency, and qualification for use in critical systems requiring long-term stability and reliability.
FAQ
What does the JAN designation mean for the V2N5416 transistor?
The JAN designation refers to Joint Army-Navy standards, ensuring the transistor meets rigorous military-grade quality and reliability criteria. This means the device undergoes extensive testing for performance, temperature resilience, and failure rates, making it suitable for critical defense and aerospace applications.
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What is the maximum collector current this transistor can handle?
This transistor supports a maximum continuous collector current of 8 amperes, allowing it to drive high-current loads in power amplification






