JANTXV2N5415P-Transistor-PIND Overview
The JANTXV2N5415P-Transistor-PIND is a high-quality, hermetically sealed phototransistor designed for precision light detection in demanding industrial environments. Featuring a silicon NPN transistor structure, this device operates reliably over a wide temperature range and offers stable performance with low dark current. Its rugged design and military-grade JAN (Joint Army-Navy) V specification ensure compliance with stringent quality and reliability standards. Ideal for industrial optoelectronic applications, the component supports sensitive optical switching, sensing, and signal amplification tasks. For detailed specifications and procurement, visit IC Manufacturer.
JANTXV2N5415P-Transistor-PIND Key Features
- Hermetically sealed glass package: Provides excellent protection against moisture and contaminants, ensuring long-term reliability in harsh environments.
- High sensitivity phototransistor structure: Enables accurate detection of light signals, critical for precise sensing and switching applications.
- Wide operating temperature range: Supports reliable functionality from -55??C to +125??C, suitable for industrial and military grade deployments.
- Low dark current characteristics: Minimizes noise and false triggering, enhancing signal integrity in low light conditions.
JANTXV2N5415P-Transistor-PIND Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Silicon NPN Phototransistor |
| Package | Hermetically Sealed TO-18 Glass |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Emitter-Collector Voltage (VECO) | 5 V |
| Collector Current (IC) | 20 mA |
| Power Dissipation | 200 mW |
| Operating Temperature Range | -55??C to +125??C |
| Dark Current (ID) | Less than 100 pA (typical) |
| Gain Bandwidth Product | Not specified (typical for phototransistor) |
| Response Time | Not specified |
JANTXV2N5415P-Transistor-PIND Advantages vs Typical Alternatives
This device offers enhanced sensitivity and reduced dark current compared to typical phototransistors, improving detection accuracy in low-light conditions. Its hermetically sealed package delivers superior environmental protection and long-term reliability, outperforming many plastic-encapsulated alternatives. The wide operating temperature range and compliance with JAN V standards make it a robust solution for industrial and military applications where consistency and durability are critical.
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Typical Applications
- Optical sensing and switching: Used in industrial automation for precise detection of light presence or absence, enabling efficient control systems.
- Instrumentation: Useful in scientific and medical devices where accurate light measurement is essential.
- Safety and security systems: Helps detect light interruptions or presence in alarm and monitoring circuits.
- Military and aerospace electronics: Reliable operation in harsh environments makes it suitable for rugged defense applications.
JANTXV2N5415P-Transistor-PIND Brand Info
The JANTXV2N5415P-Transistor-PIND is manufactured following the Joint Army-Navy (JAN) V standard, which certifies high reliability and quality for military-grade electronic components. This product is designed and produced with rigorous testing and quality assurance protocols to ensure consistent performance under extreme conditions. It is widely recognized within industrial and defense sectors for its durability, precision, and dependable operation. The brand??s commitment to excellence supports engineers and sourcing specialists in deploying this phototransistor confidently across critical applications.
FAQ
What is the primary function of the JANTXV2N5415P-Transistor-PIND?
The primary function of this device is to act as a phototransistor, converting light signals into electrical current with high sensitivity. It detects light intensity changes accurately, making it suitable for optical sensing and switching in industrial and military systems.
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What makes this phototransistor suitable for harsh environments?
Its hermetically sealed TO-18 glass package protects against moisture, dust, and contaminants, while the wide temperature range (-55??C to +125??C) ensures reliable operation in extreme thermal conditions, making it ideal for rugged applications.
How does the device??s low dark current benefit system performance?
Low dark current reduces noise and false triggering when no light is present, improving the accuracy and stability of light detection systems, especially in low-light or precision sensing scenarios.
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Can this phototransistor be used in military-grade applications?
Yes, it meets the Joint Army-Navy (JAN) V specification, which certifies it for military use with stringent requirements for reliability, quality, and environmental resistance.
What are typical voltages and currents for operating this device?
The maximum collector-emitter voltage is 30 V, emitter-collector voltage is 5 V, and maximum collector current is 20 mA. These ratings define safe operating limits to ensure device longevity and stable performance.
