JANTXV2N5339P-Transistor-PIND Overview
The JANTXV2N5339P-Transistor-PIND is a precision phototransistor designed for reliable optical detection applications. Engineered to deliver consistent light sensitivity with rapid response times, this transistor is ideal for integration in industrial sensing and switching circuits. The device offers robust performance under varying environmental conditions, ensuring dependable operation in both commercial and military-grade systems. Manufactured according to stringent quality standards, the transistor supports enhanced signal integrity and minimal noise interference, making it suitable for high-accuracy optical detection tasks. For detailed sourcing and support, visit IC Manufacturer.
JANTXV2N5339P-Transistor-PIND Key Features
- High sensitivity phototransistor: Enables precise detection of low-level light signals, improving overall system responsiveness.
- Hermetically sealed TO-18 metal can package: Protects against environmental contaminants, enhancing durability and long-term reliability.
- Consistent spectral response: Ensures stable operation across typical infrared and visible light wavelengths critical for optical sensing.
- Low dark current leakage: Reduces noise, thereby improving signal-to-noise ratio in detection circuits.
JANTXV2N5339P-Transistor-PIND Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Phototransistor, NPN |
| Package | TO-18 Metal Can |
| Collector-Emitter Voltage (VCEO) | 30 V (max) |
| Emitter-Collector Voltage (VECO) | 5 V (max) |
| Collector Current (IC) | 50 mA (max) |
| Power Dissipation | 300 mW (max) |
| Spectral Response Range | 400 nm to 1100 nm |
| Dark Current | ?? 100 nA at VCE = 10 V |
| Rise Time | ?? 5 ??s |
| Fall Time | ?? 5 ??s |
JANTXV2N5339P-Transistor-PIND Advantages vs Typical Alternatives
This phototransistor offers enhanced sensitivity and low dark current compared to standard devices, ensuring accurate optical detection with minimal noise interference. Its hermetic packaging improves reliability and environmental resistance, making it well-suited for industrial and military environments. The fast switching times enable higher speed applications, providing a competitive edge over typical phototransistors in precision sensing and control systems.
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Typical Applications
- Optical sensing in industrial automation systems, where precise light detection enables accurate position or object sensing in rugged environments.
- Light beam interruption detection in safety and security systems for reliable triggering of alarms or control signals.
- Optoelectronic switching circuits requiring fast response times and consistent performance over varying light intensities.
- Military and aerospace instrumentation where robust environmental protection and strict component standards are essential.
JANTXV2N5339P-Transistor-PIND Brand Info
The JANTXV2N5339P-Transistor-PIND is part of the JANTX series, known for meeting stringent military and industrial quality standards. This product line emphasizes reliability, environmental robustness, and precise optoelectronic performance. Manufactured under controlled conditions, the device adheres to exacting specifications ensuring consistent quality and long-term operational stability. It is widely recognized for its suitability in demanding applications where performance consistency and component traceability are critical.
FAQ
What is the primary function of this phototransistor?
This device functions as a light-sensitive transistor that converts incident light into an electrical signal. It is typically used in optical sensing and switching applications where detecting changes in light intensity is crucial for system operation.
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How does the packaging affect the device’s performance?
The hermetically sealed TO-18 metal can package protects the phototransistor from moisture, dust, and other environmental contaminants. This enhances reliability and longevity, especially in harsh or industrial environments.
What wavelength range does this transistor respond to?
The phototransistor has a spectral response range from approximately 400 nm to 1100 nm, covering visible to near-infrared light wavelengths, making it versatile for various optical detection tasks.
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What are the typical electrical limits for safe operation?
The collector-emitter voltage should not exceed 30 V, and the maximum collector current rating is 50 mA. Power dissipation should be kept below 300 mW to ensure device integrity and prevent damage.
Can this phototransistor be used in high-speed switching applications?
Yes, with rise and fall times around 5 microseconds, it is suitable for moderately fast switching applications, supporting reliable performance in control systems requiring timely optical signal detection.
