JANTXV2N5339-Transistor High-Speed Switching Transistor in TO-39 Metal Can Package

  • This transistor controls current flow efficiently, enabling precise switching in electronic circuits.
  • It features a voltage rating suitable for moderate power applications, ensuring stable operation under load.
  • The compact package type allows for board-space savings in dense circuit designs.
  • Ideal for use in amplifier circuits, it improves signal clarity and overall device performance.
  • Manufactured to meet industry standards, it offers consistent reliability in various environments.
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JANTXV2N5339-Transistor Overview

The JANTXV2N5339-Transistor is a high-performance bipolar junction transistor designed for robust switching and amplification applications in industrial electronics. Engineered with a JAN (Joint Army-Navy) military specification, this transistor offers enhanced reliability and thermal stability under demanding conditions. It supports collector currents up to 1.5A and collector-emitter voltages of 40V, making it suitable for medium-power circuits. The device??s rugged packaging and stringent quality controls ensure long-term operational integrity in avionics, defense systems, and industrial controls. This transistor is available from IC Manufacturer, backed by thorough testing and compliance with military standards.

JANTXV2N5339-Transistor Key Features

  • High current capability: Supports collector current up to 1.5A, enabling efficient handling of moderate power loads in switching and amplification circuits.
  • Robust voltage rating: Collector-emitter voltage rating of 40V ensures reliable operation in voltage-sensitive industrial environments.
  • Military-grade reliability: Constructed to meet JAN specifications, guaranteeing enhanced durability and performance under harsh conditions.
  • Thermal stability: Designed to maintain consistent electrical characteristics across a wide temperature range, critical for industrial and defense applications.
  • Low saturation voltage: Minimizes power dissipation during switching, improving overall circuit efficiency.

JANTXV2N5339-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 40V
Collector Current (IC) 1.5A
Power Dissipation (PD) 1W (typical)
Transition Frequency (fT) 100 MHz (typical)
Gain Bandwidth Product 100 MHz
DC Current Gain (hFE) 40 to 160 (varies by test conditions)
Operating Temperature Range -55??C to +125??C
Package Type TO-18 Metal Can

JANTXV2N5339-Transistor Advantages vs Typical Alternatives

This transistor offers superior military-grade durability and stable performance under wide temperature ranges compared to standard commercial transistors. Its enhanced collector current capacity and voltage ratings provide greater flexibility in medium-power applications. The device??s low saturation voltage and reliable gain characteristics improve switching efficiency and signal amplification, making it a preferred choice for mission-critical and industrial environments requiring consistent, long-term reliability.

Typical Applications

  • Switching and amplification in military and aerospace electronic systems, where ruggedness and reliability are critical for mission success.
  • Industrial control circuits requiring stable transistor performance under temperature extremes and varying load conditions.
  • Signal processing and interface circuits in avionics and defense equipment, benefiting from the transistor??s high gain and frequency response.
  • General-purpose medium-power transistor applications in harsh environments, including instrumentation and communications systems.

JANTXV2N5339-Transistor Brand Info

The JANTXV2N5339-Transistor is part of a distinguished line of JAN-specified semiconductors, known for their rigorous quality standards and reliability in defense and aerospace sectors. Produced under stringent military qualification processes, this transistor embodies the brand??s commitment to delivering components that meet or exceed the requirements of high-reliability applications. Its packaging, testing, and traceability ensure it is trusted by engineers designing critical systems where failure is not an option.

FAQ

What does the JAN designation indicate for this transistor?

The Joint Army-Navy (JAN) designation signifies that the transistor meets strict military specifications for reliability, performance, and quality. This includes rigorous testing for temperature extremes, vibration, and electrical characteristics, ensuring suitability for demanding defense and aerospace applications.

What are the key electrical limits engineers should consider when using this transistor?

Engineers should note the maximum collector-emitter voltage of 40V and collector current rating of 1.5A to avoid overstressing the device. Additionally, the power dissipation and operating temperature range must be respected to maintain reliable operation and prevent thermal damage.

In what package is the transistor supplied, and why is it important?

This transistor is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection. The metal can also shields the device from electromagnetic interference, contributing to stable operation in sensitive electronic circuits.

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How does the gain bandwidth product affect transistor performance?

The gain bandwidth product, typically around 100 MHz for this device, indicates the frequency range over which the transistor can effectively amplify signals. Higher values support better performance in high-frequency switching and amplification applications.

Can this transistor be used in commercial, non-military applications?

Yes, while designed to meet military standards, the transistor??s robust specifications and thermal stability make it suitable for demanding industrial and commercial applications requiring reliable medium-power switching or amplification.

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