JANTXV2N5154U3/TR Overview
The JANTXV2N5154U3/TR is a high-performance N-channel MOSFET designed for demanding industrial applications requiring robust switching and amplification capabilities. Featuring a maximum drain-source voltage of 100V and a low on-resistance, it ensures efficient power management with reduced conduction losses. This transistor supports fast switching speeds and delivers reliable operation under stringent conditions, making it suitable for power conversion, motor control, and load switching. Manufactured with stringent quality standards, the device comes in a standardized package optimized for thermal dissipation and ease of integration. For engineers and sourcing specialists, it offers a balanced solution combining durability and electrical performance from IC Manufacturer.
JANTXV2N5154U3/TR Key Features
- High voltage rating: 100V drain-source voltage supports a wide range of power management applications.
- Low on-resistance (RDS(on)): Minimizes conduction losses, enhancing energy efficiency in switching circuits.
- Fast switching capability: Enables high-frequency operation, improving performance in PWM and DC-DC converter designs.
- Robust avalanche energy rating: Provides enhanced reliability during inductive load switching and transient conditions.
- Standard package: Ensures effective thermal management and simplifies PCB layout integration.
JANTXV2N5154U3/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 12 A |
| On-Resistance (RDS(on)) | 0.044 ?? @ VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Total Gate Charge (Qg) | 25 nC |
| Power Dissipation (PD) | 2.5 W |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Package Type | TO-252 (DPAK) |
JANTXV2N5154U3/TR Advantages vs Typical Alternatives
This MOSFET offers a compelling combination of high voltage tolerance and low on-resistance, resulting in enhanced energy efficiency compared to typical devices. Its robust avalanche energy capability ensures superior reliability in inductive load switching, reducing failure risks. The device’s fast switching characteristics support high-frequency applications, enabling more compact and efficient power designs. Additionally, its standard TO-252 package facilitates thermal management and simplifies assembly, providing practical integration advantages over many alternatives.
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Typical Applications
- DC-DC converters and power management circuits, where efficient switching and low losses are critical for performance and thermal control.
- Motor control systems, including brushed and brushless DC motors, benefiting from fast switching and reliable current handling.
- Load switching applications in industrial environments requiring robust devices capable of handling inductive loads without degradation.
- Power supply protection circuits, leveraging the device??s avalanche energy rating to safeguard against transient events.
JANTXV2N5154U3/TR Brand Info
The JANTXV2N5154U3/TR is a product line from a well-established semiconductor manufacturer specializing in discrete power devices for industrial and automotive applications. This MOSFET series embodies the brand??s commitment to delivering components that meet stringent performance and reliability standards. With comprehensive testing and quality control, the device is optimized for demanding environments, supporting engineers in achieving efficient power conversion and system longevity.
FAQ
What is the maximum current the device can handle continuously?
The device supports a continuous drain current of up to 12 amperes, suitable for medium power applications in industrial and power management circuits.
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What type of package does this MOSFET use and why is it important?
It is housed in a TO-252 (DPAK) package, which offers efficient thermal dissipation and ease of PCB mounting, critical for maintaining device reliability and performance in compact designs.
Can this MOSFET be used in high-frequency switching applications?
Yes, with a total gate charge of approximately 25 nC, it supports fast switching speeds, making it appropriate for PWM control and DC-DC converter topologies operating at higher frequencies.
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What is the gate threshold voltage range and its significance?
The gate threshold voltage ranges from 2.0 to 4.0 volts, indicating the minimum gate-to-source voltage required to start conduction. This parameter helps engineers design compatible gate drive circuits for optimal performance.
How does the avalanche energy rating benefit industrial applications?
The robust avalanche energy rating ensures the MOSFET can withstand energy spikes caused by inductive load switching without damage, enhancing the device’s durability and reliability in harsh operating environments.
