JANTXV2N5154-Transistor by JAN – High-Speed Switching Transistor, TO-220 Package

JANTXV2N5154-Transistor Overview

The JANTXV2N5154-Transistor is a high-performance NPN bipolar junction transistor designed for applications requiring robust switching and amplification capabilities. It features a high voltage rating and considerable current handling capacity, making it suitable for industrial and aerospace environments where reliability under demanding conditions is critical. This transistor exhibits a low noise figure and excellent frequency response, enabling efficient operation in high-frequency circuits. Manufactured to stringent military standards, it delivers consistent performance across a wide temperature range. For detailed procurement and technical support, visit IC Manufacturer.

JANTXV2N5154-Transistor Key Features

• High Voltage Tolerance: Supports collector-emitter voltages up to 100 V, enabling use in power-intensive circuits with enhanced safety margins.
• Robust Current Handling: Capable of continuous collector current up to 1.5 A, ensuring reliable operation in demanding load conditions.
• Military-Grade Reliability: Produced under JAN (Joint Army-Navy) specifications, guaranteeing superior durability for aerospace and defense applications.
• Low Noise Figure: Minimizes signal degradation in amplification tasks, critical for precision analog and RF systems.

JANTXV2N5154-Transistor Technical Specifications

JANTXV2N5154-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its compliance with rigorous JAN standards, offering enhanced reliability and thermal stability compared to commercial-grade devices. Its high voltage and current ratings provide a broader operating window, while the low noise figure optimizes signal integrity in sensitive circuits. These features make it especially advantageous for aerospace and military applications where precision and endurance are paramount.

Typical Applications

• High-frequency amplification in communication and radar systems, where stable gain and low noise are essential for signal clarity and system performance.
• Switching circuits in aerospace electronics requiring robust operation under wide temperature variations and harsh environments.
• Industrial control systems demanding reliable power handling and long-term durability for critical automation tasks.
• Military-grade electronic assemblies that require components meeting stringent defense standards for safety and performance.

JANTXV2N5154-Transistor Brand Info

The JANTXV2N5154-Transistor is a trusted product within the Joint Army-Navy (JAN) series, recognized for its strict adherence to military specifications. Produced by a leading semiconductor manufacturer, this transistor ensures consistent quality, traceability, and extended operational lifespan. Its design and testing protocols meet the rigorous demands of defense and aerospace industries, making it a preferred choice among engineers requiring dependable, rugged components for critical applications.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum continuous collector current of 1.5 amperes, allowing it to handle moderate power loads safely in switching and amplification circuits.

What package type does the transistor use?

This device is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical durability, suitable for high-reliability applications.

How does the transistor perform at high frequencies?

With a gain bandwidth product around 100 MHz, the transistor is well-suited for RF and high-frequency analog applications, maintaining stable gain and low noise characteristics.

What temperature range can the transistor operate within?

The transistor is rated for operation from -55??C up to +125??C, enabling use in harsh environments typical of aerospace and military systems.

Is the transistor compliant with military standards?

Yes, it meets JAN (Joint Army-Navy) specifications, ensuring high reliability, quality control, and suitability for defense-related electronic designs.