JANTXV2N5153U3-Transistor Overview
The JANTXV2N5153U3 is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications in industrial and military-grade environments. Featuring a high voltage rating and excellent gain characteristics, this transistor is built to ensure reliable operation under demanding conditions. Its JAN (Joint Army-Navy) V-series qualification guarantees enhanced durability and consistency, making it ideal for critical electronic circuits requiring precision and stability. Sourced from IC Manufacturer, this transistor offers engineers and sourcing specialists a dependable component for high-reliability designs.
JANTXV2N5153U3-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 6 V |
| Collector Current (IC) | 1.5 A |
| Gain Bandwidth Product (fT) | 40 MHz |
| DC Current Gain (hFE) | 40 to 160 (varies with collector current) |
| Power Dissipation (PD) | 1.0 W |
| Operating Temperature Range | -55??C to +200??C (MIL-PRF-19500 standard) |
JANTXV2N5153U3-Transistor Key Features
- Military-grade qualification: Ensures high reliability and consistent performance in harsh environments, critical for aerospace and defense systems.
- High voltage tolerance up to 100 V: Enables use in circuits requiring robust voltage handling capability, protecting against voltage spikes.
- Wide operating temperature range: Maintains stable operation from -55??C to +200??C, suitable for extreme temperature applications.
- Moderate gain bandwidth: Supports switching and amplification at frequencies up to 40 MHz, balancing speed and gain.
Typical Applications
- Switching and amplification in military and aerospace circuits requiring high reliability and temperature tolerance.
- Industrial control systems where robust voltage handling and long-term durability are critical for device longevity.
- Power management and signal processing circuits demanding consistent gain and stable operation in harsh environments.
- High-reliability instrumentation and measurement equipment that benefit from the transistor??s precise electrical characteristics.
JANTXV2N5153U3-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and enhanced voltage ratings compared to typical commercial-grade BJTs. Its military qualification ensures rigorous testing and quality standards, resulting in improved sensitivity and performance consistency. With a higher operating temperature range and robust power dissipation capability, it supports demanding industrial and defense applications where typical alternatives may fail or degrade over time.
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JANTXV2N5153U3-Transistor Brand Info
The JANTXV2N5153U3 transistor is manufactured under strict military standards, commonly associated with legacy semiconductor suppliers specializing in defense-grade components. The ??JAN?? prefix signifies Joint Army-Navy certification, indicating a product built to MIL-PRF-19500 standards for reliability and ruggedness. These transistors are sourced from reputable manufacturers recognized for supplying high-quality, screened devices tailored for harsh environments and mission-critical electronic systems.
FAQ
What does the JAN designation in JANTXV2N5153U3-Transistor signify?
The JAN prefix indicates that the transistor meets Joint Army-Navy military specifications, specifically MIL-PRF-19500. This means the device has undergone rigorous testing to ensure reliability, durability, and performance under extreme environmental conditions typically required in military and aerospace applications.
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What are the key electrical limits I must consider when integrating this transistor?
The critical limits include a maximum collector-emitter voltage of 80 V and a collector current rating of 1.5 A. Staying within these parameters ensures the transistor operates safely without risk of breakdown or thermal damage. Additionally, power dissipation should







