JANTXV2N5153U3-Transistor NPN High-Voltage Transistor in TO-220 Package ?C ON Semiconductor

  • This transistor controls electrical current flow, enabling efficient signal amplification and switching in circuits.
  • High voltage rating ensures stable operation under demanding electrical conditions, preventing performance degradation.
  • Compact package reduces board space, allowing for more streamlined and lightweight electronic designs.
  • Ideal for power management in automotive or industrial applications, enhancing device durability and efficiency.
  • Manufactured with rigorous quality checks to ensure consistent performance and long-term reliability.
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JANTXV2N5153U3-Transistor Overview

The JANTXV2N5153U3 is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications in industrial and military-grade environments. Featuring a high voltage rating and excellent gain characteristics, this transistor is built to ensure reliable operation under demanding conditions. Its JAN (Joint Army-Navy) V-series qualification guarantees enhanced durability and consistency, making it ideal for critical electronic circuits requiring precision and stability. Sourced from IC Manufacturer, this transistor offers engineers and sourcing specialists a dependable component for high-reliability designs.

JANTXV2N5153U3-Transistor Technical Specifications

Parameter Specification
Device Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 1.5 A
Gain Bandwidth Product (fT) 40 MHz
DC Current Gain (hFE) 40 to 160 (varies with collector current)
Power Dissipation (PD) 1.0 W
Operating Temperature Range -55??C to +200??C (MIL-PRF-19500 standard)

JANTXV2N5153U3-Transistor Key Features

  • Military-grade qualification: Ensures high reliability and consistent performance in harsh environments, critical for aerospace and defense systems.
  • High voltage tolerance up to 100 V: Enables use in circuits requiring robust voltage handling capability, protecting against voltage spikes.
  • Wide operating temperature range: Maintains stable operation from -55??C to +200??C, suitable for extreme temperature applications.
  • Moderate gain bandwidth: Supports switching and amplification at frequencies up to 40 MHz, balancing speed and gain.

Typical Applications

  • Switching and amplification in military and aerospace circuits requiring high reliability and temperature tolerance.
  • Industrial control systems where robust voltage handling and long-term durability are critical for device longevity.
  • Power management and signal processing circuits demanding consistent gain and stable operation in harsh environments.
  • High-reliability instrumentation and measurement equipment that benefit from the transistor??s precise electrical characteristics.

JANTXV2N5153U3-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and enhanced voltage ratings compared to typical commercial-grade BJTs. Its military qualification ensures rigorous testing and quality standards, resulting in improved sensitivity and performance consistency. With a higher operating temperature range and robust power dissipation capability, it supports demanding industrial and defense applications where typical alternatives may fail or degrade over time.

JANTXV2N5153U3-Transistor Brand Info

The JANTXV2N5153U3 transistor is manufactured under strict military standards, commonly associated with legacy semiconductor suppliers specializing in defense-grade components. The ??JAN?? prefix signifies Joint Army-Navy certification, indicating a product built to MIL-PRF-19500 standards for reliability and ruggedness. These transistors are sourced from reputable manufacturers recognized for supplying high-quality, screened devices tailored for harsh environments and mission-critical electronic systems.

FAQ

What does the JAN designation in JANTXV2N5153U3-Transistor signify?

The JAN prefix indicates that the transistor meets Joint Army-Navy military specifications, specifically MIL-PRF-19500. This means the device has undergone rigorous testing to ensure reliability, durability, and performance under extreme environmental conditions typically required in military and aerospace applications.

What are the key electrical limits I must consider when integrating this transistor?

The critical limits include a maximum collector-emitter voltage of 80 V and a collector current rating of 1.5 A. Staying within these parameters ensures the transistor operates safely without risk of breakdown or thermal damage. Additionally, power dissipation should

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