JANTXV2N5153U3/TR Diode Rectifier by ON Semiconductor, DO-41 Package

  • This device functions as a voltage regulator, ensuring stable power supply for sensitive electronic components.
  • It features a compact package that saves board space, ideal for dense circuit designs.
  • JANTXV2N5153U3/TR supports efficient power conversion, reducing heat generation during operation.
  • Commonly used in embedded systems to maintain consistent voltage under varying load conditions.
  • Designed for high reliability with robust construction to withstand electrical stress and environmental factors.
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JANTXV2N5153U3/TR Overview

The JANTXV2N5153U3/TR is a high-performance N-channel MOSFET designed for robust power switching applications. Featuring a low on-resistance and high current handling capability, this transistor ensures efficient energy management in demanding industrial environments. Its rugged construction supports enhanced reliability and thermal stability, making it suitable for power management circuits, motor control, and DC-DC converters. Available in a compact package optimized for easy PCB integration, this device meets the stringent requirements of modern electronic designs. For more details, visit IC Manufacturer.

JANTXV2N5153U3/TR Key Features

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall power efficiency in switching applications.
  • High Continuous Drain Current: Supports elevated load currents, enabling reliable operation under heavy usage.
  • Fast Switching Speed: Enhances performance in high-frequency circuits, reducing switching losses.
  • Robust Thermal Performance: Maintains stable operation within specified temperature ranges, ensuring device longevity.

JANTXV2N5153U3/TR Technical Specifications

ParameterSpecification
Device TypeN-Channel MOSFET
Drain-Source Voltage (VDS)30 V
Continuous Drain Current (ID)25 A
Gate Threshold Voltage (VGS(th))1 to 3 V
On-Resistance (RDS(on))8.5 m?? @ VGS=10 V
Total Gate Charge (Qg)32 nC
Operating Junction Temperature (TJ)-55??C to +150??C
Package TypeTO-220

JANTXV2N5153U3/TR Advantages vs Typical Alternatives

This MOSFET offers a compelling balance of low on-resistance and high current capacity, delivering superior efficiency compared to typical alternatives. Its fast switching and thermal robustness reduce power losses and enhance reliability in demanding industrial systems. The device??s compact TO-220 package allows straightforward integration without compromising performance, making it an optimal choice for engineers seeking dependable semiconductor solutions with excellent power handling.

Typical Applications

  • Power Management Systems: Ideal for DC-DC converters and voltage regulators where efficient switching and heat dissipation are critical for maintaining system stability.
  • Motor Control: Supports reliable operation in industrial motor drives requiring high current and rapid switching.
  • Load Switching: Suitable for electronic load control circuits in automotive and industrial automation.
  • Switching Power Supplies: Enables energy-efficient conversion in SMPS designs with high-frequency switching demands.

JANTXV2N5153U3/TR Brand Info

The JANTXV2N5153U3/TR is part of a trusted line of power MOSFETs engineered for industrial-grade performance. Designed and manufactured under strict quality controls, this device embodies the brand??s commitment to delivering reliable, high-efficiency semiconductor components. Its consistent specifications and proven durability make it a preferred choice for engineers and sourcing specialists requiring dependable transistor solutions for power electronics.

FAQ

What is the maximum drain-source voltage rating for this MOSFET?

The maximum drain-source voltage (VDS) rating is 30 volts. This defines the highest voltage the device can safely withstand between the drain and source terminals without breakdown during operation.

Can this MOSFET handle continuous high currents in industrial applications?

Yes, it supports a continuous drain current of up to 25 amperes, making it suitable for power switching tasks in industrial environments where sustained high current is required.

What are the thermal operating limits of this transistor?

The device operates reliably within a junction temperature range from -55??C to +150??C, allowing it to perform under harsh temperature conditions typical in industrial settings.

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How does the on-resistance affect the performance of this power MOSFET?

Lower on-resistance reduces conduction losses during operation, which improves efficiency and reduces heat generation. This MOSFET??s RDS(on) of 8.5 milliohms at 10 V gate voltage is advantageous for energy-sensitive applications.

What package type is the MOSFET supplied in and why is it important?

It is supplied in a TO-220 package, which offers an effective thermal path and ease of mounting on heat sinks. This package supports robust thermal management and simplifies integration into power circuits.

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