JANTXV2N5152L-Transistor by JAN – High-Power NPN Transistor in TO-220 Package

  • This transistor controls current flow efficiently, enabling precise signal amplification and switching in circuits.
  • With a high voltage rating, it supports robust performance under demanding electrical conditions.
  • Its compact package reduces board space, facilitating design in size-constrained electronic devices.
  • Ideal for power regulation in consumer electronics, improving energy efficiency and device stability.
  • Manufactured to meet stringent reliability standards, ensuring consistent operation over extended use.
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JANTXV2N5152L-Transistor Overview

The JANTXV2N5152L-Transistor is a high-performance NPN bipolar junction transistor designed for industrial and military-grade applications requiring robust switching and amplification capabilities. Featuring JAN (Joint Army-Navy) specifications, this transistor ensures enhanced reliability and extended temperature range operation, making it ideal for harsh environments. Its maximum collector-emitter voltage of 40V and collector current rating of 150mA provide a balance between power handling and efficiency. This device is suited for use in signal amplification, switching circuits, and other demanding semiconductor applications where durability and precision are critical. For detailed sourcing and technical support, visit IC Manufacturer.

JANTXV2N5152L-Transistor Key Features

  • High Voltage Tolerance: Supports collector-emitter voltage up to 40V, enabling use in medium-voltage circuits with reliable performance.
  • Moderate Collector Current: Rated for 150mA continuous current, allowing efficient signal amplification and switching in control applications.
  • Military-Grade Reliability: Complies with JAN standards, assuring enhanced ruggedness and wide operating temperature range for harsh conditions.
  • Low Noise Characteristics: Designed to minimize signal distortion, improving overall circuit accuracy in amplification roles.

JANTXV2N5152L-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 150 mA
Power Dissipation (Ptot) 310 mW
Current Gain (hFE) 40 ?C 160 (typical)
Transition Frequency (fT) 100 MHz
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Operating Temperature Range -55 to +125 ??C

JANTXV2N5152L-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and extended temperature tolerance compared to standard commercial types due to its JAN military-grade certification. Its optimal current gain and low noise profile provide enhanced signal fidelity and switching performance. The device??s balanced voltage and current ratings deliver versatility, making it a dependable choice for applications demanding both precision and ruggedness without sacrificing efficiency.

Typical Applications

  • Signal amplification in analog circuits requiring low noise and moderate power handling, ensuring clarity and stability over temperature extremes.
  • Switching regulator circuits where reliable transistor switching improves power management and control accuracy.
  • Military and aerospace electronic systems benefiting from the device??s robust performance under harsh environmental conditions.
  • Industrial control systems requiring durable, consistent transistor operation for automation and monitoring tasks.

JANTXV2N5152L-Transistor Brand Info

The JANTXV2N5152L-Transistor is produced under the Joint Army-Navy (JAN) certification, reflecting stringent quality and reliability standards established for military and aerospace applications. This device is manufactured to meet demanding requirements for performance consistency, environmental resilience, and long-term operational stability. It is part of a legacy product line recognized for precision semiconductor components tailored for critical industrial and defense electronics.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is 150mA. This rating allows it to handle moderate current loads typical in signal amplification and switching applications without degradation of performance.

What temperature range can this transistor reliably operate within?

This device is designed to operate reliably over a wide temperature range from -55??C to +125??C, making it suitable for use in harsh environments such as military and industrial settings.

What does JAN certification mean for this transistor?

JAN certification signifies that the transistor meets rigorous military standards for quality, reliability, and environmental tolerance. This includes testing for temperature extremes, vibration, and electrical performance to ensure dependable operation in critical applications.

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How does the transistor??s current gain affect circuit performance?

The current gain (hFE) ranges from 40 to 160, enabling effective amplification of input signals. Higher gain improves circuit sensitivity and efficiency, particularly important in low-level signal processing and switching functions.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, this transistor supports moderate high-frequency operation, making it suitable for RF amplification and switching tasks within the specified frequency range.

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