JANTXV2N5151L-Transistor by JAN – High-Power NPN Transistor, TO-3 Package

JANTXV2N5151L-Transistor Overview

The JANTXV2N5151L-Transistor is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding industrial and aerospace applications. Built to military standards (JAN), this transistor offers robust performance with excellent gain characteristics and high voltage handling capabilities. It supports collector currents up to 100mA and a collector-emitter voltage of 45V, making it suitable for signal amplification, switching, and general-purpose electronic circuits requiring dependable operation under harsh conditions. The device is housed in a TO-18 metal can package, ensuring enhanced thermal dissipation and mechanical durability. Available through IC Manufacturer, it is ideal for engineers and sourcing specialists aiming for long-life, consistent transistor solutions.

JANTXV2N5151L-Transistor Key Features

• High voltage tolerance: With a collector-emitter voltage rating of 45V, it supports a wide range of circuit designs, ensuring versatility in power management applications.
• Reliable collector current capability: Supports up to 100mA collector current, enabling effective switching and amplification in low to medium power circuits.
• Military-grade construction: JAN specification guarantees enhanced ruggedness, thermal stability, and resistance to environmental stress for mission-critical uses.
• TO-18 metal can package: Provides superior heat dissipation and mechanical protection compared to plastic alternatives, increasing device longevity.

JANTXV2N5151L-Transistor Technical Specifications

JANTXV2N5151L-Transistor Advantages vs Typical Alternatives

This transistor excels in harsh environments compared to standard commercial devices due to its military-grade certification, ensuring superior reliability and long-term stability. Its robust voltage and current ratings combined with a metal can package provide enhanced thermal management and mechanical protection, reducing failure rates in industrial and aerospace systems. These qualities make it a preferred choice for applications demanding consistent performance under stress, outperforming typical plastic-encapsulated BJTs.

Typical Applications

• Signal amplification in aerospace and defense electronics, where high reliability and stable gain characteristics are critical for mission success.
• Switching elements in industrial control systems requiring dependable operation under variable environmental conditions.
• General-purpose amplification in communication equipment benefiting from low noise and high-frequency response.
• Test and measurement instrumentation circuits demanding precise transistor performance and long operational life.

JANTXV2N5151L-Transistor Brand Info

The JANTXV2N5151L-Transistor is produced under stringent military standards ensuring rigorous testing and quality assurance. This product is part of a family of JAN-certified transistors known for their ruggedness, consistency, and reliability. Manufactured with advanced semiconductor processes and housed in durable TO-18 metal can packages, it meets the high expectations of industrial and aerospace engineers who require trustworthy components for critical applications. This brand??s commitment to quality ensures that each transistor delivers predictable performance through extended service life.

FAQ

What does the JAN designation mean for this transistor?

The JAN (Joint Army-Navy) designation indicates that the transistor meets military standards for quality and reliability. It undergoes strict screening and testing to ensure it can operate reliably in extreme environmental and electrical conditions, making it suitable for aerospace and defense applications.

What is the maximum collector current this transistor can handle?

This transistor supports a maximum collector current of 100mA. This current rating defines the highest continuous current it can safely conduct through the collector without damage, making it suitable for low to medium power switching and amplification tasks.

How does the TO-18 metal can package benefit the transistor??s performance?

The TO-18 metal can package offers superior heat dissipation compared to plastic packages, reducing thermal stress on the transistor. It also provides enhanced mechanical protection and electromagnetic shielding, improving overall device reliability in harsh industrial and aerospace environments.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (f_T) of approximately 100 MHz, this transistor supports moderate high-frequency applications such as RF amplifiers and communication circuits, where fast switching and signal integrity are important.

What are the voltage limits for the emitter-base and collector-base junctions?

The maximum emitter-base voltage (V_EBO) is 5V, and the maximum collector-base voltage (V_CBO) is 50V. Staying within these limits ensures the transistor operates safely without breakdown or permanent damage to the junctions.