The JANTXV2N5003 is a high-performance NPN bipolar junction transistor designed for rugged and reliable operation in industrial and military applications. It offers robust voltage and current handling capabilities with a collector-emitter voltage rating of 60V and a collector current capacity of up to 800mA. Manufactured to JANTXV military standards, this transistor ensures enhanced durability and consistent performance under demanding environmental conditions. Its complementary gain and switching characteristics make it suitable for amplification and switching tasks in control circuits, power regulation, and signal processing. Sourced from a trusted IC Manufacturer, this device supports engineers and sourcing specialists requiring dependable, high-reliability semiconductors.
JANTXV2N5003-Transistor Technical Specifications
Parameter
Value
Transistor Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
60 V
Collector Current (IC)
800 mA (max)
Gain Bandwidth Product (fT)
100 MHz (typical)
Power Dissipation (Ptot)
625 mW (typical)
DC Current Gain (hFE)
40 to 320 (depending on test conditions)
Collector-Base Voltage (VCBO)
75 V
Operating Temperature Range
-55??C to +125??C
Package Type
TO-18 Metal Can
JANTXV2N5003-Transistor Key Features
High voltage handling capability: Supports up to 60V collector-emitter voltage, enabling use in medium-power switching and amplification circuits with reliable voltage tolerance.
Robust current capacity: Maximum collector current of 800mA accommodates moderate load driving, important for control and interface applications requiring stable current flow.
Wide operating temperature range: Rated from -55??C to +125??C, allowing dependable performance in harsh industrial and military environments.
Military-grade reliability: Manufactured to JANTXV standards, ensuring enhanced ruggedness and consistency critical for aerospace, defense, and industrial systems.
Typical Applications
Switching elements in power control circuits and industrial automation systems, where stable operation under varying loads and temperatures is essential.
Signal amplification stages in communication equipment requiring moderate gain and high frequency response.
Interface transistors for driving relays and other electromechanical devices in control panels and embedded systems.
General-purpose amplification and switching in military-grade electronics, benefiting from its proven durability and reliability.
JANTXV2N5003-Transistor Advantages vs Typical Alternatives
This transistor offers a balance of voltage and current ratings that exceed many standard commercial transistors, combined with military-grade manufacturing standards for superior reliability. Its broad operating temperature range and TO-18 metal can package provide enhanced thermal stability and mechanical robustness, making it more reliable under stress compared to typical plastic-encapsulated alternatives. These factors translate to better long-term performance in critical industrial and defense applications.
The JANTXV2N5003 transistor is produced under the JANTXV series, a designation reflecting military-grade quality and reliability standards. Typically supplied by established semiconductor manufacturers specializing in ruggedized devices, this transistor complies with stringent JANTXV military specifications. These standards ensure the device meets rigorous testing for temperature extremes, mechanical shock, and electrical performance, making it a preferred choice for engineers designing systems requiring dependable operation in challenging environments.
FAQ
What is the maximum collector current rating of this transistor
