JANTXV2N4449UA-Transistor Overview
The JANTXV2N4449UA is a high-performance NPN bipolar junction transistor designed for switching and amplification in demanding electronic circuits. Engineered to meet military standards, it offers reliable operation under harsh conditions, making it suitable for aerospace, defense, and industrial applications. With a robust collector-emitter voltage rating and a high current gain, this transistor ensures efficient signal control and power handling. Its rugged construction and precise electrical characteristics provide engineers and sourcing specialists with a dependable component for critical designs. For detailed sourcing and technical support, visit IC Manufacturer.
JANTXV2N4449UA-Transistor Key Features
- High Collector-Emitter Voltage (Vceo): Enables operation in circuits requiring up to 30V, ensuring versatility in various power applications.
- Enhanced Current Gain (hFE): Offers a typical gain value around 100, which improves amplification efficiency and reduces signal distortion.
- Military-Grade Reliability: Manufactured to JANTX specifications, the transistor guarantees stable performance in extreme temperature ranges from -55??C to +125??C.
- Fast Switching Speed: Supports high-frequency operation, optimizing performance in RF and pulse amplification circuits.
JANTXV2N4449UA-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Collector-Emitter Voltage (Vceo) | 30 V |
| Collector-Base Voltage (Vcbo) | 60 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 600 mA |
| Power Dissipation (Ptot) | 625 mW |
| Current Gain (hFE) | 70 to 300 (typical ~100) |
| Transition Frequency (fT) | 100 MHz |
| Operating Temperature Range | -55??C to +125??C |
JANTXV2N4449UA-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its military-grade construction, delivering superior reliability and consistent performance under extreme environmental conditions. Its higher current gain and voltage ratings provide enhanced efficiency and robustness compared to commercial-grade transistors. The fast switching capability and broad temperature tolerance make it an ideal choice for precision applications requiring dependable operation and longevity.
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Typical Applications
- High-frequency switching circuits in aerospace and defense systems, where signal integrity and reliability are critical under temperature extremes.
- Power amplification stages in industrial control equipment requiring stable current gain and voltage handling.
- Signal processing circuits in communication devices, benefiting from its fast transition frequency.
- General-purpose amplification and switching in rugged electronic assemblies operating in harsh environments.
JANTXV2N4449UA-Transistor Brand Info
The JANTXV2N4449UA transistor is produced under strict military standards, ensuring superior quality and performance. The JANTX designation indicates compliance with rigorous screening and testing requirements. This product is designed for engineers who demand dependable components for mission-critical applications, offering trusted performance, long-term reliability, and consistency in manufacturing. It is a preferred choice for defense contractors, aerospace engineers, and industrial system designers seeking a proven transistor solution.
FAQ
What does JANTX certification mean for this transistor?
JANTX certification signifies that the transistor meets military standards for quality, reliability, and environmental testing. Components with this designation undergo stringent screening processes, including burn-in and temperature cycling, ensuring suitability for high-reliability applications.
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Can this transistor operate at high temperatures?
Yes, the device is rated for operation from -55??C to +125??C, making it suitable for environments with extreme temperature variations, such as aerospace or industrial settings.
What is the maximum collector current this transistor can handle?
The maximum collector current for this transistor is 600 mA, allowing it to support moderate power loads in switching and amplification circuits.
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Is the JANTXV2N4449UA suitable for RF applications?
Yes, with a transition frequency (fT) of approximately 100 MHz, it is capable of handling high-frequency signals, making it appropriate for many RF and pulse amplification tasks.
How does this transistor compare to commercial-grade 2N4449 devices?
Compared to commercial versions, this military-grade transistor offers enhanced reliability, broader temperature range, and rigorous quality assurance, ensuring better performance in harsh or mission-critical applications.

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