JANTXV2N4237-Transistor by JANTX | High-Power Switching Transistor | TO-220 Package

  • This transistor amplifies electrical signals efficiently, enabling precise control in various circuits.
  • Its high voltage rating ensures stable performance under demanding electrical conditions.
  • The compact package reduces board space, facilitating integration into densely packed electronic designs.
  • Ideal for switching applications in power management, it enhances energy efficiency and system responsiveness.
  • Manufactured to meet strict quality standards, it offers consistent reliability throughout its operational life.
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产品上方询盘

JANTXV2N4237-Transistor Overview

The JANTXV2N4237 is a high-reliability NPN bipolar junction transistor designed for applications requiring robust switching and amplification capabilities. This transistor features a collector-emitter voltage rating suitable for medium-power applications, delivering dependable performance in industrial and military-grade environments. It is optimized for low noise, high gain, and stability under varying temperature conditions, making it ideal for precision analog circuits and signal processing. Available in a hermetically sealed package, the device ensures long-term durability and consistent operation across harsh operating conditions. For detailed specifications and sourcing, visit IC Manufacturer.

JANTXV2N4237-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 60 V, ensuring reliable operation in medium-power switching circuits.
  • Superior hFE gain: Offers a DC current gain typically between 40 and 160, enabling efficient amplification with reduced distortion in analog signal paths.
  • Low noise characteristics: Minimizes signal interference, enhancing performance in sensitive communication and instrumentation applications.
  • Hermetic metal can package: Provides enhanced environmental protection, critical for aerospace and military-grade electronics requiring long-term reliability and stability.

JANTXV2N4237-Transistor Technical Specifications

ParameterValueUnits
Collector-Emitter Voltage (VCEO)60V
Collector-Base Voltage (VCBO)80V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)150mA
DC Current Gain (hFE)40 to 160Unitless
Transition Frequency (fT)100MHz
Power Dissipation (PD)625mW
Operating Temperature Range-55 to +125??C

JANTXV2N4237-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced voltage handling and low noise performance compared to typical general-purpose BJTs, making it a strong choice for precision amplification and switching in demanding environments. Its hermetic packaging improves reliability and reduces failure rates under thermal and mechanical stress, providing a clear advantage for aerospace and industrial applications.

Typical Applications

  • Signal amplification in aerospace and military communication systems, where stable gain and low noise are critical for maintaining signal integrity over wide temperature ranges.
  • Switching circuits in industrial control systems requiring robust voltage tolerance and reliable operation under harsh environmental conditions.
  • Analog signal processing modules in instrumentation equipment, benefiting from the device??s high gain and low noise characteristics.
  • Low-level audio amplification circuits where minimal distortion and consistent performance are necessary.

JANTXV2N4237-Transistor Brand Info

The JANTXV2N4237 transistor is manufactured under stringent quality standards to meet military and aerospace specifications. It is distributed by IC Manufacturer, a trusted supplier specializing in high-performance semiconductor components designed for critical industrial applications. This product line emphasizes durability, precision, and compliance with rigorous environmental and reliability tests, ensuring consistent performance in demanding sectors.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is rated at 150 mA. This rating allows it to handle moderate power levels suitable for switching and amplification in various industrial and military applications.

Can this transistor operate in high-temperature environments?

Yes, it is designed to operate reliably within a temperature range from -55??C to +125??C, making it suitable for harsh environments such as aerospace and industrial settings where temperature stability is critical.

What package type does this transistor use and why is it important?

This transistor is housed in a hermetically sealed metal can package. Hermetic sealing enhances protection against moisture, dust, and mechanical stress, which is essential for maintaining long-term reliability in demanding applications.

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产品中间询盘

Is this transistor suitable for low-noise amplification circuits?

Indeed, it features low noise characteristics, making it an excellent choice for sensitive analog and RF circuits where minimizing signal distortion and interference is important.

How does the current gain (hFE) range affect circuit design?

The current gain range of 40 to 160 provides flexibility in amplification stages, enabling designers to optimize the transistor??s performance for different signal levels and load conditions, ensuring efficient operation in various circuit topologies.

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