JANTXV2N3999P-Transistor-PIND by ON Semiconductor – High-Speed Switching, PIND Package

JANTXV2N3999P-Transistor-PIND Overview

The JANTXV2N3999P is a high-reliability PNP bipolar junction transistor (BJT) designed for precision switching and amplification applications in demanding environments. Constructed to meet stringent military standards, this transistor offers consistent performance with a focus on durability and stable electrical characteristics. Its rugged design and tightly controlled parameters make it ideal for aerospace, defense, and industrial electronic circuits. Sourcing specialists and engineers will appreciate its extended temperature range and guaranteed hFE gain values, ensuring dependable operation under various environmental stresses. For detailed product support and procurement, visit IC Manufacturer.

JANTXV2N3999P-Transistor-PIND Technical Specifications

JANTXV2N3999P-Transistor-PIND Key Features

• High gain stability: Maintains consistent DC current gain across temperature extremes, ensuring predictable amplification in precision circuits.
• Military-grade reliability: Designed and tested to meet stringent MIL-STD requirements, suitable for mission-critical aerospace and defense electronics.
• Hermetic TO-18 package: Protects the transistor from environmental contamination, enhancing long-term durability and reducing failure rates.
• Wide operating temperature range: Supports reliable function from -55??C to +125??C, accommodating harsh industrial and military environments.

Typical Applications

• Low-noise amplification circuits in avionics and communications systems, where signal integrity and component reliability are paramount.
• Switching applications in power management modules that require fast response and robust thermal performance.
• Analog signal processing in instrumentation equipment, benefiting from tight gain control and low leakage currents.
• Defense and aerospace electronics that demand components compliant with military qualification standards and extended lifecycle support.

JANTXV2N3999P-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers superior reliability and performance under extreme conditions compared to standard commercial BJTs. Its hermetic packaging and military qualification provide enhanced protection from environmental factors, ensuring stable operation and longevity. With a high gain bandwidth and well-controlled hFE, it delivers precise amplification and switching capabilities, making it advantageous for engineers needing consistent, rugged components in aerospace, defense, and industrial applications.

JANTXV2N3999P-Transistor-PIND Brand Info

The JANTXV2N3999P transistor is manufactured by a leading supplier specializing in military and aerospace-grade semiconductor devices. This product falls under the JANTX series, known for meeting or exceeding MIL-PRF-19500 standards. The brand emphasizes rigorous quality control, hermetic sealing, and extended temperature ranges to support critical mission applications. Their comprehensive testing ensures each transistor complies with strict electrical and mechanical requirements, making it a trusted choice for high-reliability projects worldwide.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this device is specified at 200 mA, allowing