JANTXV2N3999-Transistor NPN High-Speed Switching Transistor in TO-39 Metal Can Package

JANTXV2N3999-Transistor Overview

The JANTXV2N3999 is a high-reliability NPN bipolar junction transistor designed for demanding military and aerospace applications. It meets stringent JAN (Joint Army-Navy) specifications, ensuring enhanced robustness and performance under extreme environmental conditions. The transistor operates with a maximum collector-emitter voltage of 100 V and is optimized for low noise and high gain, making it suitable for RF amplification and switching tasks. Its hermetically sealed metal can package supports superior thermal dissipation and mechanical stability, providing engineers and sourcing specialists with a dependable solution for critical systems. For more information, visit IC Manufacturer.

JANTXV2N3999-Transistor Technical Specifications

JANTXV2N3999-Transistor Key Features

• Military-Grade Reliability: Complies with JAN standards ensuring performance in harsh environments, critical for aerospace and defense applications.
• High Voltage Capability: Supports up to 100 V collector-emitter voltage, enabling robust operation in switching and amplification circuits requiring elevated voltage margins.
• Wide Operating Temperature Range: Rated from -55??C to +125??C, ensuring stability and consistent performance across extreme thermal conditions.
• Hermetically Sealed Package: The TO-18 metal can packaging offers superior protection against moisture and contaminants, improving device longevity and reliability.

Typical Applications

• RF and IF Amplifiers in communication systems requiring low noise and stable gain under variable environmental conditions.
• Switching circuits in aerospace and military electronics where high voltage and temperature tolerance are essential.
• Signal processing modules in avionics, benefiting from the transistor??s high gain and frequency response.
• General purpose amplification tasks in ruggedized industrial equipment demanding long-term reliability.

JANTXV2N3999-Transistor Advantages vs Typical Alternatives

This transistor offers superior environmental resilience and voltage handling compared to standard commercial-grade devices. Its JAN qualification ensures enhanced quality and reliability, critical for mission-critical applications. The hermetically sealed metal can package provides better thermal management and contamination resistance than plastic encapsulated alternatives. Additionally, its high gain and frequency characteristics improve circuit efficiency and signal integrity, making it a preferred choice for precision industrial and military electronics.

JANTXV2N3999-Transistor Brand Info

The JANTXV2N3999 transistor is produced under strict military standards by established semiconductor manufacturers specializing in high-reliability components. The JAN (Joint Army-Navy) prefix indicates compliance with MIL-STD-19500 standards, typically sourced from suppliers with extensive aerospace and defense credentials. This product is widely recognized within the industry for its rugged construction and dependable electrical characteristics, making it a trusted component in defense, aerospace, and industrial markets. Sourcing specialists value this transistor for its documented traceability and qualification pedigree.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 200 mA. This rating ensures safe operation within specified power dissipation limits, making it suitable for moderate current applications in both analog and switching circuits.

How does the hermetic metal can package benefit device performance?

The hermetic metal can package provides excellent protection against moisture, dust, and mechanical stress. This enhances device longevity and stability, especially in harsh environments such as aerospace or military applications where environmental sealing is critical.

Can this transistor operate reliably at high temperatures?