JANTXV2N3998-Transistor NPN High-Power Switching Transistor TO-220 Package

JANTXV2N3998-Transistor Overview

The JANTXV2N3998 transistor is a high-reliability, military-grade NPN bipolar junction transistor designed for demanding applications requiring robust performance and thermal stability. This transistor operates with a high collector-emitter voltage and collector current capacity, making it suitable for switching and amplification in rugged environments. Manufactured to meet stringent JAN (Joint Army-Navy) specifications, it offers enhanced durability and consistency under extreme conditions. Engineers and sourcing specialists will appreciate its proven track record in aerospace, defense, and industrial electronics. For more detailed specifications and sourcing options, visit IC Manufacturer.

JANTXV2N3998-Transistor Technical Specifications

JANTXV2N3998-Transistor Key Features

• High Voltage and Current Handling: Supports up to 100 V collector-emitter voltage and 10 A collector current, enabling use in power control and amplification circuits.
• Military-Grade Reliability: Built to JAN standards, ensuring superior performance in harsh environments such as aerospace and defense applications.
• Wide Operating Temperature Range: Functions reliably from -65??C to +200??C, suitable for extreme thermal conditions without performance degradation.
• Robust TO-3 Metal Can Package: Provides excellent thermal dissipation and mechanical durability, enhancing long-term operational stability.

Typical Applications

• High-reliability power amplification in military and aerospace communication systems, where consistent performance under stress is critical.
• Switching and control in industrial power supplies requiring rugged transistors with high voltage and current ratings.
• Temperature-critical circuits operating in defense electronics, benefiting from extended operating temperature specifications.
• Pulse and high-frequency switching applications, leveraging the transistor??s gain bandwidth for effective signal processing.

JANTXV2N3998-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling capabilities compared to standard commercial-grade devices, combined with military-grade reliability and a wide temperature operating range. Its robust packaging and strict JAN certification ensure enhanced durability and performance stability, making it a preferred choice for high-reliability industrial and defense applications where sensitivity, accuracy, and long-term reliability are critical.

JANTXV2N3998-Transistor Brand Info

The JANTXV2N3998 is a product conforming to Joint Army-Navy (JAN) standards, a classification denoting military-grade electronic components. These components are typically produced by reputable semiconductor manufacturers specializing in high-reliability devices for defense and aerospace sectors. The transistor??s JAN marking indicates rigorous testing and qualification processes, ensuring reliability in extreme environments. This product is widely recognized in the industry for its consistent performance and durability, making it a trusted choice for engineers sourcing components for mission-critical systems.

FAQ

What are the key electrical ratings of this transistor?

This transistor supports a maximum collector-emitter voltage of 100 V, collector-base voltage of 120 V, and can handle a collector current up to 10 A. It is designed for high-power applications with power dissipation up to 100 W, making it suitable for robust amplification and switching roles.

What makes the JANTXV2N3998 suitable for military and aerospace applications?

The device complies with stringent JAN standards, ensuring high reliability and performance under extreme conditions, including wide temperature ranges from -65??C to +200??C. Its rugged TO-3 metal can package enhances thermal management and mechanical strength, which are essential for harsh environments in aerospace and defense use cases.

Can this transistor be used in high-frequency applications?

While primarily designed for