JANTXV2N3868S-Transistor by JAN | High-Power NPN Transistor | TO-3 Package

  • This transistor provides efficient switching and amplification, enabling precise control in electronic circuits.
  • Its voltage rating supports stable operation under demanding electrical conditions, ensuring consistent performance.
  • The compact package reduces board space, facilitating integration into densely populated circuit designs.
  • Ideal for power regulation in consumer electronics, it helps maintain device stability and energy efficiency.
  • Manufactured to meet industry standards, it offers reliable operation over extended usage periods.
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产品上方询盘

JANTXV2N3868S-Transistor Overview

The JANTXV2N3868S is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications. Engineered to meet stringent military specifications, this transistor offers reliable operation under extreme environmental conditions, ensuring consistent performance in demanding industrial and defense electronics. Featuring a high collector current rating and enhanced voltage tolerance, it is ideal for power amplification and switching circuits where durability and stability are critical. Sourcing this component from IC Manufacturer guarantees adherence to quality standards and long-term availability for professional engineering projects.

JANTXV2N3868S-Transistor Key Features

  • High Collector Current Capability: Supports collector currents up to 12 A, enabling efficient handling of heavy load switching and power amplification.
  • Superior Voltage Ratings: Collector-emitter voltage rating of 60 V provides robust tolerance for high-voltage circuits, reducing risk of breakdown.
  • Military-Grade Reliability: Complies with JAN (Joint Army-Navy) specifications, ensuring ruggedness and extended temperature operation from -55??C to +200??C.
  • Low Saturation Voltage: Enhances switching efficiency by minimizing losses, which is critical in high-speed switching applications.

JANTXV2N3868S-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 12 A
Power Dissipation (PD) 160 W
Gain Bandwidth Product (fT) 20 MHz
Operating Temperature Range -55 to +200 ??C
Package Type TO-3 Metal Can

JANTXV2N3868S-Transistor Advantages vs Typical Alternatives

Compared to standard transistors, this device stands out with its enhanced collector current rating and superior voltage tolerance, ensuring higher power handling and greater durability. Its military-grade certification guarantees reliability in harsh environments, which typical commercial transistors may not sustain. Additionally, the low saturation voltage improves switching efficiency, reducing power loss and heat generation. These advantages make it a preferred choice for engineers seeking rugged, high-performance transistors in demanding industrial and defense applications.

Typical Applications

  • Power Amplification: Ideal for audio and RF power amplification circuits requiring high current capability and stable gain.
  • Switching Regulators: Suitable for high-power switching regulator designs where efficient switching and thermal stability are essential.
  • Motor Control: Used in motor driver circuits for industrial equipment, providing reliable high-current switching performance.
  • Military and Aerospace Electronics: Designed to withstand extreme temperatures and mechanical stress, making it suitable for defense-grade electronic systems.

JANTXV2N3868S-Transistor Brand Info

This transistor is produced under strict military standards, identified by its JAN (Joint Army-Navy) designation, which signifies compliance with rigorous reliability and performance tests. Packaged in a durable TO-3 metal can, it is built to deliver consistent operation in critical applications. The brand focuses on providing components that meet exacting industry requirements, ensuring long-term availability and traceability for defense and industrial customers.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating is 12 amperes. This allows the transistor to handle high-current loads efficiently, making it suitable for power amplification and switching applications.

What temperature range can the transistor operate within?

The device supports an operating temperature range from -55??C to +200??C, which ensures reliable performance in both extreme cold and high-temperature environments typical in military and industrial settings.

What package type does the transistor use?

The transistor is housed in a TO-3 metal can package. This robust packaging type provides excellent thermal conductivity and mechanical protection, ideal for high-power applications.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

With a gain bandwidth product of approximately 20 MHz, the transistor is suitable for moderate frequency amplification and switching tasks, but may not be ideal for very high-frequency RF applications.

What are the key voltage ratings important for this transistor?

The collector-emitter voltage is rated at 60 V, the collector-base voltage at 80 V, and the emitter-base voltage at 5 V. These ratings define the maximum voltages the transistor can safely withstand during operation.

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