JANTXV2N3867S-Transistor Overview
The JANTXV2N3867S is a high-performance NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality and reliability standards. Featuring a collector-emitter voltage rating of 60V and a continuous collector current of 10A, this transistor delivers robust amplification and switching capabilities under harsh environmental conditions. Its JAN (Joint Army-Navy) and JANTX (Joint Army-Navy Transistor eXtreme) qualifications ensure compliance with rigorous military specifications, making it ideal for mission-critical systems. Available in a hermetically sealed metal can package, it offers enhanced protection against moisture and contaminants. Engineers and sourcing specialists trust this device for durability and consistent performance in demanding industrial electronics. For detailed sourcing, visit IC Manufacturer.
JANTXV2N3867S-Transistor Key Features
- High Voltage and Current Handling: With a collector-emitter voltage of 60V and collector current of 10A, it supports high-power amplification and switching, essential for robust industrial control circuits.
- Military-Grade Qualification: Complies with MIL-PRF-19500 standards under JANTX classification, ensuring superior reliability and performance in extreme temperature and vibration environments.
- Hermetically Sealed TO-18 Package: Protects internal components from environmental factors, increasing operational lifespan and reducing failure rates in harsh conditions.
- Low Saturation Voltage: Enables efficient switching, minimizing power loss and heat generation, which is critical for energy-efficient system designs.
JANTXV2N3867S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Continuous Collector Current (IC) | 10 A |
| DC Current Gain (hFE) | 40 to 320 (varies by test conditions) |
| Transition Frequency (fT) | 3 MHz (typical) |
| Power Dissipation (PD) | 30 W (max) |
| Operating Temperature Range | -65??C to +200??C |
| Package Type | Hermetically Sealed TO-18 Metal Can |
JANTXV2N3867S-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced reliability and robustness compared to standard commercial devices, particularly in high-voltage and high-current applications. Its military-grade qualification ensures superior tolerance to temperature extremes, mechanical shock, and vibration. The hermetically sealed package significantly reduces failure rates from environmental exposure, making it a preferred choice for aerospace and defense electronics where long-term stability and precision are critical.
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Typical Applications
- Power amplification in aerospace communication systems requiring stable, high-current transistor operation across wide temperature ranges.
- Switching elements in military radar and defense electronic modules demanding rugged performance and reliability.
- Industrial control systems where high voltage handling and robust design protect against electrical stress and environmental factors.
- High-reliability analog circuits in avionics and space equipment, benefiting from hermetic sealing and military certification.
JANTXV2N3867S-Transistor Brand Info
The JANTXV2N3867S transistor is manufactured under strict military standards to meet the demanding requirements of defense and aerospace applications. The JANTX series designation reflects stringent screening and testing protocols ensuring device performance in extreme environments. This product line is recognized for combining proven semiconductor technology with rugged mechanical packaging, delivering dependable operation and long service life. The brand emphasizes quality assurance, traceability, and compliance with MIL-PRF-19500 specifications, supporting engineers and sourcing specialists in mission-critical system designs.
FAQ
What voltage and current ratings does this transistor support?
This transistor supports a maximum collector-emitter voltage of 60 volts and a continuous collector current rating of 10 amperes, making it suitable for high-power amplification and switching applications in industrial and military electronics.
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What type of package does the device use and why is it important?
The device is housed in a hermetically sealed TO-18 metal can package. This packaging protects the transistor from moisture, dust, and other environmental contaminants, which is critical for maintaining reliability in harsh conditions such as aerospace and military environments.
Is the transistor compliant with any military standards?
Yes, it meets the MIL-PRF-19500 standard under the JANTX classification. This compliance ensures the device has undergone rigorous testing and quality assurance procedures to perform reliably under extreme temperature, vibration, and shock conditions.
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What are the typical operating temperature ranges for this transistor?
The transistor is qualified to operate reliably within a temperature range of -65 degrees Celsius to +200 degrees Celsius, supporting use in applications with severe thermal demands such as avionics and aerospace systems.
How does the transistor??s gain characteristic affect its performance?
The device offers a DC current gain (hFE) ranging from 40 to 320 depending on test conditions. This gain range enables efficient signal amplification and switching performance, allowing engineers to design circuits with precise control over current and voltage amplification.
