JANTXV2N3867P-Transistor-PIND by JAN | High-Gain NPN Transistor | PIND Package

  • This transistor enables efficient switching and amplification, improving circuit performance and signal control.
  • Featuring a PIND package, it offers a compact footprint that helps save valuable board space in tight designs.
  • Its electrical characteristics support stable operation under varying loads, ensuring consistent device behavior.
  • Ideal for use in communication equipment, it enhances signal integrity and reduces interference in complex systems.
  • Manufactured with strict quality controls, the component delivers reliable operation across extended use and conditions.
Microchip Technology-logo
产品上方询盘

JANTXV2N3867P-Transistor-PIND Overview

The JANTXV2N3867P-Transistor-PIND is a robust discrete transistor designed for high-reliability applications requiring precise switching and amplification. This transistor is manufactured to meet stringent military standards, ensuring superior performance under harsh environmental conditions. Its robust construction offers excellent durability and consistent electrical characteristics, making it suitable for demanding industrial and aerospace uses. Sourcing specialists and engineers benefit from its reliable specifications and traceability, backed by IC Manufacturer quality assurance.

JANTXV2N3867P-Transistor-PIND Key Features

  • High voltage handling: Supports collector-emitter voltages up to 60V, enabling stable operation in high-voltage circuits.
  • Moderate current capacity: Can handle collector currents up to 1.5A, suitable for medium-power amplification and switching tasks.
  • Military-grade reliability: Constructed and tested to JAN standards, ensuring long-term stability and low failure rates in critical applications.
  • TO-18 metal can package: Provides excellent thermal dissipation and mechanical protection, facilitating integration in compact PCB layouts.

JANTXV2N3867P-Transistor-PIND Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vceo) 60 V
Collector Current (Ic) 1.5 A
Power Dissipation (Pd) 800 mW
Transition Frequency (ft) 100 MHz (typical)
Gain Bandwidth Product 100 MHz
Package Type TO-18 Metal Can
Operating Temperature Range -55??C to +125??C
DC Current Gain (hFE) 40 to 320 (varies by test conditions)

JANTXV2N3867P-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers enhanced reliability due to its JAN qualification, which exceeds typical commercial-grade devices in durability and performance consistency. Its moderate current and voltage ratings combined with a metal can package ensure stable operation under thermal stress. Compared to standard transistors, it delivers superior environmental resistance and traceability, critical for aerospace and defense implementations.

Typical Applications

  • Switching and amplification in military and aerospace electronics, where reliability and ruggedness are paramount. Its specification range supports control circuits and signal processing modules operating in harsh environments.
  • Industrial control systems requiring stable transistor performance at elevated temperatures and voltages.
  • Signal amplification stages in communication equipment benefiting from its high transition frequency and gain bandwidth.
  • Embedded systems and instrumentation that demand components with verified traceability and stringent quality standards.

JANTXV2N3867P-Transistor-PIND Brand Info

The JANTXV2N3867P-Transistor-PIND is produced under strict military joint Army-Navy (JAN) standards, ensuring compliance with high-reliability requirements. This product reflects the manufacturer’s commitment to quality and durability, offering engineers and sourcing professionals a dependable transistor solution for critical applications. Its documentation and testing meet the expectations of industries where failure is not an option.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current for this transistor is rated at 1.5 amperes, enabling it to handle moderate power loads in switching and amplification applications without compromising performance or reliability.

What package type does the transistor come in?

This transistor is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection, making it suitable for demanding industrial and military environments.

Is this transistor suitable for high-frequency applications?

Yes, the device offers a transition frequency of approximately 100 MHz, making it suitable for moderate high-frequency amplification and switching tasks in RF and communication circuits.

📩 Contact Us

产品中间询盘

What temperature range can this transistor operate within?

The specified operating temperature range extends from -55??C to +125??C, ensuring reliable function in extreme environmental conditions typically encountered in aerospace and military applications.

How does the JAN qualification affect the transistor??s reliability?

JAN qualification signifies that the transistor meets rigorous military standards for quality and durability, including extensive testing for environmental stress, which ensures enhanced reliability over commercial-grade equivalents.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?