JANTXV2N3810L-Dual-Transistor by JAN | High-Speed Switching | TO-220 Package

  • This dual transistor amplifies electrical signals, enabling efficient switching and signal control in circuits.
  • Its high voltage rating ensures stable operation under demanding electrical conditions, enhancing circuit durability.
  • The compact package minimizes board space, allowing for more efficient circuit layouts in tight designs.
  • Ideal for use in power management modules, it improves energy efficiency and reduces thermal stress in devices.
  • Manufactured with stringent quality controls, it offers consistent performance and long-term reliability in applications.
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产品上方询盘

JANTXV2N3810L-Dual-Transistor Overview

The JANTXV2N3810L-Dual-Transistor is a high-performance bipolar junction transistor (BJT) designed for precision switching and amplification in demanding industrial applications. Featuring two complementary transistors within a single package, it offers enhanced circuit integration and space-saving benefits. The device exhibits robust electrical characteristics including high voltage and current ratings, making it suitable for rugged environments requiring reliable operation under varying loads. Engineers and sourcing specialists will appreciate its compliance with military-grade standards, ensuring long-term durability and consistent performance. For quality assurance and detailed product data, visit the IC Manufacturer.

JANTXV2N3810L-Dual-Transistor Key Features

  • Dual transistor configuration: Integrates two complementary NPN and PNP transistors in one package, simplifying design and reducing board space.
  • High voltage rating: Supports collector-emitter voltages up to 100 V, enabling use in high-voltage switching applications.
  • Robust current handling: Capable of continuous collector currents up to 8 A, ensuring reliable operation in power amplification circuits.
  • Military-grade reliability: Manufactured to JAN (Joint Army-Navy) specifications, providing enhanced durability and consistent performance under harsh conditions.

JANTXV2N3810L-Dual-Transistor Technical Specifications

Parameter Specification
Type Dual Bipolar Junction Transistor (NPN & PNP)
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 8 A (continuous)
Power Dissipation (PD) 125 W
Gain Bandwidth Product (fT) ?? 5 MHz
Package Type TO-3 Metal Can
Operating Temperature Range -55??C to +200??C
Transition Frequency 5 MHz
hFE (DC Current Gain) Minimum 20 at IC = 4 A

JANTXV2N3810L-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device offers superior integration by combining complementary transistors in a single TO-3 package, reducing component count and improving thermal management. Compared to discrete single transistors, it delivers enhanced reliability under high current and voltage stresses, making it ideal for industrial switching and amplification. Its compliance with military-grade standards ensures longevity and consistent performance, which typical commercial-grade transistors may not guarantee.

Typical Applications

  • Power amplification in industrial control systems, where high current capacity and voltage tolerance are critical for driving heavy loads reliably.
  • Switching regulators requiring robust transistor pairs to handle rapid switching cycles with minimal thermal degradation.
  • Motor control circuits that benefit from complementary transistor pairs for efficient bidirectional current flow and control.
  • Signal amplification stages in rugged environments, leveraging the device??s military-grade reliability and thermal endurance.

JANTXV2N3810L-Dual-Transistor Brand Info

The JANTXV2N3810L-Dual-Transistor is manufactured under stringent Joint Army-Navy (JAN) standards, reflecting a commitment to military-grade quality and reliability. This product is engineered to meet the rigorous demands of defense and aerospace sectors, where performance under extreme environmental conditions is mandatory. The brand emphasizes quality assurance and consistency, making this transistor a trusted component for engineers designing high-reliability systems.

FAQ

What is the maximum collector current rating for this dual transistor?

The device supports a continuous collector current of up to 8 amperes, enabling it to handle significant power loads in industrial and military applications without compromising reliability.

What package type does this transistor use, and why is it important?

This dual transistor is housed in a TO-3 metal can package, which offers excellent thermal conductivity and mechanical protection, critical for maintaining performance in high-power and high-temperature environments.

How does the military-grade specification affect the transistor??s reliability?

Meeting JAN standards ensures the transistor undergoes rigorous testing for temperature extremes, mechanical stress, and electrical performance, resulting in enhanced durability and consistent operation in harsh conditions.

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产品中间询盘

Can this transistor be used in high-frequency applications?

While the gain bandwidth product is approximately 5 MHz, making it suitable for medium-frequency applications, it may not be optimal for very high-frequency circuits requiring transistors with higher transition frequencies.

What are the typical operating temperature limits for this device?

This transistor is rated for an operating temperature range from -55??C up to +200??C, allowing it to function reliably in both extreme cold and high-temperature industrial environments.

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