JANTXV2N3766-Transistor by JAN – High-Performance Switching Transistor, TO-39 Package

  • This transistor amplifies electrical signals, enabling efficient control of current flow in circuits.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent performance.
  • The compact package design reduces board space, aiding in the development of smaller, lightweight devices.
  • Ideal for switching applications, it enhances device responsiveness and energy efficiency in power management systems.
  • Manufactured to meet industry standards, it offers dependable operation over extended periods in diverse conditions.
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JANTXV2N3766-Transistor Overview

The JANTXV2N3766 transistor is a military-grade NPN silicon transistor designed for high-reliability switching and amplification applications. Built to withstand rigorous environmental conditions, this transistor offers a collector-emitter voltage rating of 60V and a collector current capacity of 10A, making it suitable for demanding industrial and defense electronics. Its robust design ensures stable performance in temperature extremes and high-stress situations, which is critical for aerospace and communication systems. Available through IC Manufacturer, the device supports engineers and sourcing specialists seeking dependable transistor solutions with proven operational integrity.

JANTXV2N3766-Transistor Key Features

  • High current handling capability: Supports collector currents up to 10A, providing reliable operation in power-intensive circuits.
  • Enhanced voltage tolerance: Collector-emitter voltage rating of 60V enables the device to perform under higher voltage stresses without breakdown.
  • Military-grade JAN (Joint Army-Navy) specification: Ensures strict quality and reliability standards for harsh environments.
  • Low saturation voltage: Improves efficiency by minimizing power loss during switching operations.

JANTXV2N3766-Transistor Technical Specifications

ParameterSpecification
Transistor TypeNPN Silicon
Collector-Emitter Voltage (Vce)60 V
Collector-Base Voltage (Vcb)60 V
Emitter-Base Voltage (Veb)5 V
Collector Current (Ic)10 A
Power Dissipation (Ptot)50 W
DC Current Gain (hFE)20 min @ Ic = 4A
Transition Frequency (fT)20 MHz
Operating Temperature Range-65??C to +200??C

JANTXV2N3766-Transistor Advantages vs Typical Alternatives

This transistor excels in high-current and high-voltage applications compared to typical alternatives by offering superior power dissipation and military-grade reliability. Its robust construction ensures operation across a wide temperature range with consistent gain performance, reducing failure risk in critical systems. Low saturation voltage enhances switching efficiency, making it a preferred choice for demanding industrial and defense electronics applications.

Typical Applications

  • High-power switching circuits in aerospace and defense systems where durability and precise control of high currents are essential.
  • Industrial motor control circuits requiring reliable transistor switching under fluctuating loads and harsh environments.
  • Power amplifiers in communication equipment needing consistent gain at elevated frequencies and temperatures.
  • Robust electronic control units in automotive and military hardware that demand high voltage and current tolerance.

JANTXV2N3766-Transistor Brand Info

The JANTXV2N3766 transistor is manufactured under strict Joint Army-Navy (JAN) standards, representing a trusted brand in military and industrial-grade semiconductor components. Known for its rugged design and dependable performance, this product line emphasizes reliability and quality assurance. It is widely used by engineers requiring components that meet rigorous environmental and electrical specifications, ensuring mission-critical applications maintain operational integrity.

FAQ

What does the “JANTX” designation indicate about this transistor?

“JANTX” refers to a military-grade transistor classification indicating that the device meets rigorous Joint Army-Navy standards for quality, reliability, and performance under extreme environmental conditions. This ensures suitability for defense and aerospace applications.

What are the maximum voltage and current ratings for this transistor?

The transistor supports a maximum collector-emitter voltage of 60V and a collector current of up to 10A, allowing it to handle substantial power levels in demanding circuits without degradation.

Can this transistor operate at elevated temperatures?

Yes, it is rated for operation across a wide temperature range from -65??C up to +200??C, making it suitable for harsh environments where temperature extremes are common.

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What is the significance of the DC current gain (hFE) rating?

The minimum DC current gain of 20 at 4A collector current signifies the transistor??s amplification efficiency, ensuring adequate gain for reliable switching and amplification in power circuits.

Is this transistor suitable for high-frequency applications?

With a transition frequency of 20 MHz, this device can handle moderate high-frequency signals, making it appropriate for certain communication and amplification tasks but not suited for ultra-high-frequency RF applications.

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