JANTXV2N3765-Transistor Overview
The JANTXV2N3765-Transistor is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification applications in demanding environments. Manufactured to meet stringent military and industrial standards, this transistor offers robust electrical characteristics including a high collector-emitter voltage and reliable current gain, ensuring stable operation under elevated stress conditions. Its hermetically sealed TO-18 metal can package provides enhanced thermal dissipation and environmental protection, making it suitable for aerospace, defense, and industrial control systems. For engineers and sourcing specialists prioritizing quality and durability, the JANTXV2N3765 delivers dependable performance where reliability is critical. More details are available from IC Manufacturer.
JANTXV2N3765-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Collector Current (IC) | 200 mA |
| Power Dissipation (Ptot) | 300 mW |
| DC Current Gain (hFE) | 40 to 160 (at IC=10 mA) |
| Transition Frequency (fT) | 100 MHz |
| Package Type | Hermetically sealed TO-18 metal can |
| Operating Temperature Range | -55??C to +125??C |
JANTXV2N3765-Transistor Key Features
- High voltage tolerance: With a collector-emitter voltage of 60 V, it supports demanding switching tasks without breakdown risks.
- Wide current gain range: Provides flexibility in amplification applications, ensuring precise control over gain in varying circuit conditions.
- Hermetic TO-18 package: Offers superior environmental protection and thermal dissipation, enhancing reliability in harsh or high-temperature settings.
- High transition frequency: Enables efficient high-speed switching and amplification up to 100 MHz, ideal for RF and fast digital circuits.
Typical Applications
- Signal amplification in military and aerospace systems where robust operation and long-term reliability are critical.
- Switching components in industrial controls requiring stable performance over wide temperature ranges.
- High-frequency circuits such as RF amplifiers and oscillators benefiting from high transition frequency.
- General-purpose amplification and switching in ruggedized electronic equipment exposed to harsh environments.
JANTXV2N3765-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its hermetically sealed TO-18 package, enhancing durability compared to plastic-encapsulated equivalents. Its broad current gain range and high voltage rating provide design flexibility and improved sensitivity in control circuits. Additionally, its high transition frequency allows integration into fast switching and RF applications, delivering a balance of reliability and performance superior to many standard transistors.
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JANTXV2N3765-Transistor Brand Info
The JANTXV2N3765-Transistor is produced under military qualification standards by manufacturers specializing in high-reliability semiconductors. This device typically comes from legacy semiconductor suppliers recognized for stringent quality controls and compliance with JEDEC and MIL-STD-883 testing. The JANTX prefix indicates its classification as a JAN (Joint Army-Navy) transistor, ensuring suitability for aerospace, defense, and industrial sectors demanding consistent performance under extreme conditions. Such components are often sourced from trusted vendors providing full traceability and qualification documentation.
