JANTXV2N3764L-Transistor Overview
The JANTXV2N3764L transistor is a high-reliability NPN bipolar junction transistor designed for demanding electronic switching and amplification applications. Engineered for use in military and aerospace-grade circuits, this transistor features robust construction and stringent quality standards ensuring extended operational life and consistent performance under harsh environmental conditions. Its high voltage and current ratings make it suitable for power amplification and switching tasks, while its complementary design supports efficient integration in various industrial and defense systems. Sourced from IC Manufacturer, this transistor delivers dependable performance where precision and durability are critical.
JANTXV2N3764L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector Current (IC) | 200 mA |
| Power Dissipation (Ptot) | 800 mW |
| Transition Frequency (fT) | 100 MHz |
| Gain Bandwidth Product | 100 MHz |
| Operating Temperature Range | -55??C to +125??C |
| Package Type | TO-18 Metal Can |
| hFE (DC Current Gain) | 40 to 160 (at IC = 10 mA) |
JANTXV2N3764L-Transistor Key Features
- High Voltage Capability: With a collector-emitter voltage rating of 100 V, it supports high-voltage switching and amplification, enabling use in power management and control circuits.
- Robust Current Handling: Supports collector currents up to 200 mA, suitable for moderate power applications requiring reliable current conduction.
- Wide Operating Temperature Range: Ensures stable performance from -55??C to +125??C, making it ideal for military and aerospace environments where temperature extremes are common.
- Metal Can Package: The TO-18 hermetic metal can package provides enhanced mechanical durability and thermal dissipation, improving device lifetime and reliability.
Typical Applications
- High-reliability switching in military communication and control systems requiring stable transistor operation under extreme conditions.
- Amplification stages in instrumentation and sensor interfaces where precise gain and low noise are critical.
- Power regulation circuits in aerospace electronics benefiting from the device??s robust voltage and current capabilities.
- Signal processing modules in industrial equipment that demand long-term reliability and consistent performance.
JANTXV2N3764L-Transistor Advantages vs Typical Alternatives
This transistor stands out for its combination of high voltage and current ratings alongside a broad operating temperature range, offering superior reliability compared to standard commercial transistors. The hermetic metal can package ensures protection against environmental stress, enhancing device longevity and stability in mission-critical systems. These attributes make it an excellent choice where accuracy, durability, and electrical performance must be maintained under harsh operational conditions.
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JANTXV2N3764L-Transistor Brand Info
The JANTXV2N3764L is a military-grade transistor produced under stringent quality standards often associated with established semiconductor manufacturers specializing in defense and aerospace components. This device conforms to JAN (Joint Army-Navy) specifications, reflecting enhanced screening and reliability testing compared to commercial-grade equivalents. The manufacturer focuses on delivering components capable of withstanding rigorous environmental and electrical demands, making this product suitable for critical applications requiring dependable semiconductor performance.
FAQ
What distinguishes the JANTXV2N3764L transistor from commercial transistors?
The transistor adheres to JAN military specifications, meaning it undergoes more rigorous testing for temperature tolerance, electrical stability, and mechanical integrity. This makes it more reliable in harsh environments compared to commercial-grade transistors, ideal for aerospace and defense applications.
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