JANTXV2N3762L-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

  • This transistor controls current flow, enabling efficient switching and amplification in electronic circuits.
  • Its maximum voltage rating ensures safe operation under high electrical stress, preventing device failure.
  • The compact package type reduces board space, facilitating dense circuit designs in limited areas.
  • Ideal for use in power regulation circuits, it maintains stable performance under varying load conditions.
  • Built to meet industry reliability standards, the device offers consistent operation over extended use.
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JANTXV2N3762L-Transistor Overview

The JANTXV2N3762L transistor is a high-reliability NPN bipolar junction transistor (BJT) designed for military and industrial applications requiring robust switching and amplification performance. Featuring a collector-emitter voltage rating of 80 V and a collector current of up to 10 A, this transistor supports demanding power management and signal control tasks. Its JAN (Joint Army-Navy) certification ensures compliance with stringent quality and environmental standards, making it suitable for aerospace, defense, and harsh environment electronics. Available in a TO-3 metal can package, the device provides excellent thermal dissipation for reliable operation under elevated temperatures. For more detailed specifications, visit the IC Manufacturer.

JANTXV2N3762L-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction ?C
Collector-Emitter Voltage (VCEO) 80 Volts
Collector-Base Voltage (VCBO) 100 Volts
Emitter-Base Voltage (VEBO) 5 Volts
Collector Current (IC) 10 Amperes
Power Dissipation (PD) 115 Watts
DC Current Gain (hFE) 40?C160 ?C
Transition Frequency (fT) 5 MHz
Package Type TO-3 Metal Can ?C

JANTXV2N3762L-Transistor Key Features

  • High-voltage tolerance: Rated for 80 V collector-emitter voltage, enabling reliable operation in high-voltage circuits.
  • High current capacity: Supports collector currents up to 10 A, suitable for medium-power switching and amplification tasks.
  • Robust power dissipation: With 115 W rating and TO-3 package, the transistor offers excellent thermal management for continuous operation under load.
  • JAN certification: Meets military standards for quality and environmental reliability, ensuring consistent performance in harsh conditions.
  • Wide current gain range: DC gain between 40 and 160 allows flexibility in circuit design for amplification and switching scenarios.
  • Low transition frequency: 5 MHz fT supports medium-speed switching applications without compromising signal integrity.

Typical Applications

  • Power switching circuits in aerospace and defense systems where high reliability and voltage ratings are mandatory for mission-critical performance.
  • Linear amplifiers requiring medium to high collector current and voltage handling in industrial control equipment.
  • High power audio amplifier stages where thermal management and robustness are essential for audio fidelity and device longevity.
  • General-purpose medium power switching in harsh environments, including automotive and heavy machinery electronics.

JANTXV2N3762L-Transistor Advantages vs Typical Alternatives

This transistor provides superior reliability under extreme conditions due to its JAN military certification and rugged TO-3 packaging. Its combination of high voltage ratings and substantial current capacity outperforms many commercial transistors in power handling and thermal dissipation. This makes it especially advantageous for aerospace and defense applications requiring durable, long-life components. The broad current gain range also enhances circuit flexibility, providing better control and efficiency compared to standard industrial transistors.

JANTXV2N3762L-Transistor Brand Info

The JANTXV2N3762L is produced under the JAN (Joint Army

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