JANTXV2N3749-Transistor Overview
The JANTXV2N3749 is a high-performance NPN bipolar junction transistor designed for use in switching and amplification applications within aerospace, military, and industrial environments. This transistor offers robust electrical characteristics, including a collector-emitter voltage rating of 80 V and a collector current capacity up to 200 mA, ensuring reliable operation under demanding conditions. The device is constructed to meet JAN (Joint Army-Navy) specifications, guaranteeing enhanced durability and long-term stability. Engineers and sourcing specialists will appreciate its compatibility with a wide range of industrial circuits requiring precision and ruggedness. For detailed manufacturer information, visit IC Manufacturer.
JANTXV2N3749-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 200 mA |
| Power Dissipation (Ptot) | 300 mW |
| Current Gain (hFE) | 40 to 160 (at IC = 10 mA) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Temperature Range | ?55??C to +200??C (JANTXV2 military standard) |
JANTXV2N3749-Transistor Key Features
- Wide voltage and current ratings: Supports up to 80 V collector-emitter voltage and 200 mA collector current, enabling use in varied power switching circuits.
- High current gain (hFE): Provides a gain range from 40 to 160, allowing efficient signal amplification and reliable switching performance.
- Military-grade temperature tolerance: Operates from ?55??C to +200??C, ensuring stability in harsh environments such as aerospace and defense systems.
- Low power dissipation: Rated for 300 mW, contributing to device longevity and thermal reliability in compact electronic designs.
Typical Applications
- Switching and amplification in military and aerospace electronic circuits, where reliability and high performance under temperature extremes are critical.
- Signal amplification in sensitive industrial control systems requiring stable current gain and noise reduction.
- General-purpose transistor applications in ruggedized equipment and instrumentation.
- Use in power regulation and driver stages within embedded control systems demanding stringent quality standards.
JANTXV2N3749-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability under extreme temperature ranges compared to typical commercial devices, making it ideal for military and aerospace applications. Its stable current gain and high voltage ratings provide enhanced accuracy and switching performance. The ruggedized JAN certification ensures consistent quality and durability, reducing failure rates in critical systems where other standard transistors might degrade or fail prematurely.
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JANTXV2N3749-Transistor Brand Info
The JANTXV2N3749 transistor is produced under rigorous Joint Army-Navy (JAN) standards which certify its suitability for military and aerospace applications. While the transistor is widely available from multiple reputable manufacturers specializing in military-grade components, it is typically associated with legacy and trusted semiconductor producers known for high-reliability discrete devices. These manufacturers ensure full compliance with stringent quality and environmental standards, delivering devices with enhanced performance in extreme conditions. The JAN designation confirms its origins in defense-related supply chains and industrial-grade electronics.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current is rated at 200 mA, allowing the transistor to handle moderate load currents in switching and amplification roles without compromising reliability.
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Can this transistor operate at high temperatures?
Yes, it is designed to operate reliably within a temperature range from ?55??C up to +200??C, meeting military specifications for harsh environmental conditions.







