JANTXV2N3737UB-Transistor NPN Power Transistor in TO-3 Package by JANTX

  • This transistor amplifies electrical signals, enabling efficient current control in electronic circuits.
  • It features a high voltage rating, ensuring stable operation under demanding electrical conditions.
  • The compact package design reduces board space, facilitating integration in dense circuit layouts.
  • Ideal for switching applications, it improves performance in power management and signal regulation tasks.
  • Manufactured to meet strict quality standards, it offers dependable operation over extended use.
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JANTXV2N3737UB-Transistor Overview

The JANTXV2N3737UB transistor is a high-performance, silicon NPN bipolar junction transistor designed for switching and amplification in demanding industrial environments. Engineered for robustness and reliability, this device supports continuous collector currents up to 15A and collector-emitter voltages reaching 100V, enabling efficient power handling in various electronic circuits. Its low saturation voltage and high gain characteristics make it ideal for applications requiring precise control and minimal power loss. Available in a TO-220AB package, the transistor ensures effective thermal management. For sourcing and detailed datasheet information, visit IC Manufacturer.

JANTXV2N3737UB-Transistor Key Features

  • High Collector Current Capability: Supports up to 15A continuous collector current, enabling efficient switching in high-power applications.
  • Robust Voltage Handling: Collector-Emitter voltage rating of 100V ensures reliable operation in circuits with moderate to high voltage requirements.
  • Low Saturation Voltage: Minimizes power dissipation during switching, improving overall system efficiency and reducing thermal stress.
  • Fast Switching Speed: Suitable for applications requiring rapid response without compromising reliability.
  • Thermally Efficient Package: The TO-220AB package offers excellent heat dissipation, enhancing device lifetime under continuous operation.
  • High Gain Characteristics: Provides effective signal amplification, ensuring consistent performance in analog and digital circuits.
  • Industrial Grade Qualification: Designed to meet stringent standards for durability and environmental stability.

JANTXV2N3737UB-Transistor Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5 V
Continuous Collector Current IC 15 A
Gain Bandwidth Product fT 30 MHz
DC Current Gain (hFE) hFE 25?C75 (typical)
Collector Dissipation PC 75 W
Junction Temperature Tj 200 ??C
Storage Temperature Range Tstg -65 to +200 ??C
Package Type TO-220AB

JANTXV2N3737UB-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high current handling and voltage rating compared to standard NPN BJTs, making it highly suitable for power switching and amplification tasks. Its low saturation voltage reduces conduction losses, increasing circuit efficiency. The robust TO-220AB package ensures excellent thermal performance, contributing to long-term reliability. Such features deliver enhanced operational stability and integration ease in industrial control and power management applications.

Typical Applications

  • Power switching in industrial motor control circuits, where high collector current and voltage ratings are essential for reliable operation under load.
  • Amplification stages in audio and signal processing equipment requiring stable gain and linearity.
  • Relay driving and solenoid control circuits benefiting from rapid switching and low saturation voltage.
  • Voltage regulation and power supply modules that depend on efficient heat dissipation and robust transistor performance.

JANTXV2N3737UB-Transistor Brand Info

The JANTXV2N3737UB transistor is a premium offering from a reputable semiconductor manufacturer known for industrial-grade discrete components. This device is engineered to meet rigorous quality and reliability standards, ensuring consistent performance in harsh environments. The product is backed by extensive testing and datasheet documentation, making it a trusted choice for engineers and sourcing specialists seeking dependable, high-power transistors.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a continuous collector current of up to 15 amperes, which allows it to handle high power loads in switching and amplification applications without compromising reliability.

Which package type does the transistor use, and how does it impact thermal management?

This device is housed in a TO-220AB package, which is well-known for its excellent heat dissipation capabilities. This packaging facilitates effective thermal management, enabling the transistor to operate safely at higher power levels.

What voltage ranges can this transistor handle safely?

The transistor features a collector-emitter voltage rating of 100 volts and a collector-base voltage rating of 100 volts, making it suitable for circuits operating within these voltage limits without risk of breakdown.

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How does the low saturation voltage benefit circuit efficiency?

A low saturation voltage minimizes power loss when the transistor is in the ??on?? state, reducing heat generation and improving overall energy efficiency in switching applications, which extends component lifespan and lowers cooling requirements.

Is this transistor suitable for high-frequency applications?

With a gain bandwidth product of approximately 30 MHz, the transistor can be used in moderately high-frequency circuits, providing a balance between switching speed and power handling for typical industrial applications.

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