JANTXV2N3735L-Transistor by JAN | High-Power Switching Transistor | TO-220 Package

  • This transistor provides reliable switching and amplification, enhancing circuit control and signal processing efficiency.
  • Its maximum voltage rating supports stable operation under varying electrical conditions, ensuring consistent performance.
  • The compact package design enables efficient board-space utilization, making it suitable for dense electronic assemblies.
  • Ideal for use in power management circuits, it helps maintain energy efficiency and thermal stability in devices.
  • Manufactured to meet strict quality standards, it offers dependable long-term operation in demanding environments.
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JANTXV2N3735L-Transistor Overview

The JANTXV2N3735L-Transistor is a robust, high-performance NPN bipolar junction transistor designed for military and industrial applications requiring high voltage and current handling capabilities. It features a collector-emitter voltage rating of 350 V and a continuous collector current of 10 A, making it suitable for power amplification and switching tasks. Engineered to meet stringent JAN (Joint Army-Navy) standards, this transistor ensures enhanced reliability and durability under harsh environments. Its complementary electrical characteristics support efficient integration into high-frequency circuits and power control systems. Sourced from a trusted IC Manufacturer, this device offers consistent performance for critical electronic applications.

JANTXV2N3735L-Transistor Key Features

  • High Voltage Capability: With a collector-emitter voltage (Vce) rating of 350 V, it supports high-voltage switching and amplification, enabling operation in demanding industrial environments.
  • High Continuous Collector Current: Rated for 10 A continuous current, providing reliable power handling for medium to high power applications.
  • Military-Grade Qualification: Built to meet JAN specifications, ensuring superior reliability, thermal stability, and radiation resistance for defense and aerospace uses.
  • Low Saturation Voltage: Offers efficient conduction with reduced power loss, enhancing overall circuit efficiency and thermal management.

JANTXV2N3735L-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 350 V
Collector-Base Voltage (Vcbo) 450 V
Emitter-Base Voltage (Vebo) 7 V
Continuous Collector Current (Ic) 10 A
Peak Collector Current (Ic peak) 20 A
Power Dissipation (Pd) 150 W
Transition Frequency (fT) 40 MHz
DC Current Gain (hFE) 40 to 160 ??
Operating Junction Temperature (Tj) -65 to +200 ??C

JANTXV2N3735L-Transistor Advantages vs Typical Alternatives

This transistor excels over typical alternatives by offering a higher voltage rating and a robust continuous current capacity, which enhances performance under strenuous operational conditions. Its military-grade certification guarantees reliability and longevity in extreme environments. Additionally, the low saturation voltage minimizes power loss, improving overall system efficiency and thermal management compared to standard commercial transistors.

Typical Applications

  • Power Amplifiers: Ideal for driving loads in industrial and military power amplifiers requiring high voltage and current handling with reliable linearity and gain.
  • Switching Regulators: Suitable for use in high-voltage switching power supplies where efficient power conversion and thermal stability are critical.
  • Motor Control Circuits: Provides dependable switching performance for controlling medium power motors in rugged industrial environments.
  • High-Frequency Pulse Circuits: Supports operations in pulse switching applications due to its fast transition frequency and stable gain characteristics.

JANTXV2N3735L-Transistor Brand Info

The JANTXV2N3735L-Transistor is manufactured under strict Joint Army-Navy (JAN) standards, representing a category of military-specification semiconductors known for their enhanced ruggedness and reliability. This product line is recognized for its rigorous testing and qualification processes, ensuring consistent performance in demanding defense, aerospace, and industrial environments. The transistor is part of a well-established portfolio that supports critical applications requiring high voltage, high current, and superior thermal endurance.

FAQ

What is the maximum collector-emitter voltage rating of this transistor?

The maximum collector-emitter voltage (Vceo) rating is 350 volts. This high voltage rating allows the transistor to be used safely in circuits with significant voltage stresses, ensuring reliable operation without breakdown.

Can this transistor handle continuous high current loads?

Yes, it is rated for a continuous collector current of 10 amperes, which allows it to manage sustained high current loads typical in power amplification and switching applications.

What makes this transistor suitable for military or aerospace applications?

It is built to meet the JAN (Joint Army-Navy) standards, which include stringent testing for temperature extremes, mechanical shock, and radiation resistance, ensuring high reliability under harsh conditions.

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What is the significance of the transistor??s low saturation voltage?

Low saturation voltage reduces power dissipation during conduction, improving efficiency and reducing heat generation, which is critical for maintaining thermal stability in power circuits.

At what frequencies can this transistor operate effectively?

The transition frequency (fT) is typically around 40 MHz, making it suitable for applications that require moderate high-frequency switching or amplification performance.

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