JANTXV2N3735-Transistor by JAN | High-Power NPN Transistor | TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It supports high voltage operation, ensuring stable performance under demanding electrical conditions.
  • The compact package offers board-space savings, facilitating integration into smaller device layouts.
  • Ideal for switching applications, it enhances device responsiveness and energy management in power supplies.
  • Manufactured with stringent quality controls, it delivers consistent and reliable operation over time.
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产品上方询盘

JANTXV2N3735-Transistor Overview

The JANTXV2N3735 is a high-performance NPN bipolar junction transistor (BJT) designed for military and aerospace applications requiring stringent reliability and stability. This transistor operates with a collector-emitter voltage rating suitable for medium-power switching and amplification tasks. Engineered to meet JAN (Joint Army-Navy) specifications, it offers enhanced ruggedness and thermal resilience, making it ideal for harsh environments. The device supports fast switching speeds and reliable gain characteristics, ensuring consistent performance in critical circuits. Sourcing specialists and design engineers will appreciate its proven reliability and well-documented parameters. For more information, visit the IC Manufacturer website.

JANTXV2N3735-Transistor Key Features

  • High Voltage Handling: Supports a maximum collector-emitter voltage of 60V, enabling use in medium voltage circuits without compromising device integrity.
  • Robust Current Capability: Handles collector currents up to 20A, suitable for demanding power switching applications requiring high drive currents.
  • Military-Grade Reliability: Compliant with JAN standards, ensuring enhanced durability and stable operation under extreme temperature and mechanical stress.
  • Fast Switching Speed: Low transition times ensure efficient operation in high-frequency switching environments, improving overall circuit responsiveness.

JANTXV2N3735-Transistor Technical Specifications

Parameter Specification
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 20 A (peak)
Power Dissipation (Ptot) 150 W
Transition Frequency (fT) 4 MHz
Gain Bandwidth Product 4 MHz
Junction Temperature Range (Tj) -65??C to +200??C

JANTXV2N3735-Transistor Advantages vs Typical Alternatives

This transistor excels in applications demanding high collector current and voltage capability combined with military-grade reliability. Compared to typical commercial transistors, it offers superior thermal stability and ruggedness, ensuring long-term operation in harsh environments. Its fast switching times and high gain make it more efficient for power amplification and switching circuits, while JAN certification guarantees enhanced quality and traceability, critical for defense and aerospace sectors.

Typical Applications

  • Power switching in military and aerospace electronic control systems, where robust performance and reliability under extreme conditions are mandatory.
  • Amplification stages in communication equipment requiring stable gain and high power handling.
  • Industrial motor control circuits that benefit from high current capacity and fast switching characteristics.
  • High-reliability power supply regulation in defense avionics and ruggedized embedded systems.

JANTXV2N3735-Transistor Brand Info

The JANTXV2N3735 transistor is part of the Joint Army-Navy (JAN) series, recognized for stringent military-quality standards. Designed for reliability in harsh environments, this product undergoes rigorous testing to ensure compliance with MIL-STD requirements. The brand reflects a commitment to durability, performance, and traceability, catering specifically to aerospace, defense, and industrial applications where failure is not an option.

FAQ

What is the maximum collector current this transistor can handle?

The device supports a peak collector current of up to 20 amperes, making it suitable for high-power switching and amplification tasks typical in military and aerospace systems.

Can this transistor operate at high temperatures?

Yes, it is rated for junction temperatures ranging from -65??C to +200??C, allowing reliable operation in extreme thermal environments encountered in defense and industrial applications.

Is the JANTXV2N3735 suitable for high-frequency applications?

With a transition frequency of approximately 4 MHz, this transistor supports moderately high-frequency switching and amplification, suitable for many control and communication circuits.

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产品中间询盘

What makes this transistor different from commercial equivalents?

Unlike standard commercial components, this transistor meets JAN military specifications, offering enhanced ruggedness, thermal stability, and traceability, essential for mission-critical deployments.

What voltage ratings are important for this transistor?

Key voltage ratings include a collector-emitter voltage of 60 V, collector-base voltage of 80 V, and emitter-base voltage of 7 V, defining its operational limits in power and signal circuits.

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