JANTXV2N3725L-Transistor Overview
The JANTXV2N3725L transistor is a high-performance silicon NPN bipolar junction transistor designed for industrial and military applications requiring robust switching and amplification capabilities. It is constructed to meet stringent JAN (Joint Army-Navy) specifications, ensuring reliability under harsh environmental conditions. With a maximum collector-emitter voltage of 60V and a collector current rating of 8A, this transistor supports moderate power handling in compact form factors. Its high gain and fast switching speed make it suitable for a broad range of analog and digital electronic circuits. Engineers and sourcing specialists rely on this device for dependable operation in critical systems. More information is available from IC Manufacturer.
JANTXV2N3725L-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Maximum Collector-Emitter Voltage (Vceo) | 60 V |
| Collector Current (Ic) | 8 A |
| Power Dissipation (Ptot) | 50 W |
| Gain Bandwidth Product (fT) | 30 MHz |
| Junction Temperature (Tj) Max | 200 ??C |
| Package Type | TO-3 Metal Can |
| Gain (hFE) Minimum | 15 (at Ic = 4A, Vce = 4V) |
| Storage Temperature Range | -65 ??C to +200 ??C |
JANTXV2N3725L-Transistor Key Features
- High Collector Current Capacity: Supports up to 8A, enabling reliable operation in medium-power switching and amplification tasks.
- Robust Voltage Rating: Withstands collector-emitter voltages up to 60V, suitable for various industrial power circuits.
- TO-3 Package for Enhanced Thermal Management: The metal can package ensures excellent heat dissipation, enhancing device reliability under high power conditions.
- Military-Grade Quality: Built to JAN specifications, guaranteeing performance under extreme temperature and environmental stresses.
Typical Applications
- Power amplifier stages in industrial and military communication equipment requiring stable gain and durability in harsh environments.
- Switching regulator circuits where efficient handling of moderate power loads and high voltage is essential.
- Motor control systems requiring rugged transistors capable of withstanding thermal and electrical stress.
- General-purpose switching and signal amplification in aerospace and defense electronics.
JANTXV2N3725L-Transistor Advantages vs Typical Alternatives
This transistor offers a combination of moderate power handling and high reliability that typical commercial transistors may lack. Its military-grade JAN certification ensures superior performance in demanding environments, with enhanced thermal management via the TO-3 package. Compared to standard alternatives, it provides better durability, consistent gain, and higher voltage tolerance, making it ideal for mission-critical industrial and defense applications.
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JANTXV2N3725L-Transistor Brand Info
The JANTXV2N3725L is a military-grade transistor commonly manufactured and supplied by established semiconductor producers specializing in defense and industrial components. This device adheres to the Joint Army-Navy (JAN) standards, which define strict quality and reliability criteria for electronic parts used in military applications. The brand behind this transistor is known for stringent testing, durability, and long-term availability, making it a trusted choice among engineers designing rugged electronic systems. The product is typically stocked by authorized distributors supporting legacy and modern industrial technology markets.
FAQ
What does the JAN designation indicate for this transistor?
The JAN (Joint Army-Navy) designation signifies that the transistor meets stringent military standards for quality, reliability, and performance. Devices with JAN certification undergo rigorous testing to ensure they can operate reliably under extreme temperature, vibration, and environmental conditions typical in defense applications.
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What is the typical operating temperature range for this transistor?
This transistor supports a wide operating temperature range up to 200 ??C junction temperature, making it suitable for high-temperature environments found in industrial and military electronics. The storage temperature range is from -65 ??C to +200 ??C, ensuring reliable performance over extended periods.
